1978
DOI: 10.1088/0022-3727/11/4/003
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On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot

Abstract: Possible sources of deviations of semiconductor/metal and semiconductor/electrolyte Schottky barriers from ideality are discussed. The conditions under which the flat-band potential of the barrier can be determined by capacitance measurements are deduced. Results on the flat-band potential and the position of the band edges for several semiconductor/electrolyte barriers are given.

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Cited by 374 publications
(267 citation statements)
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“…In order to further investigate the role of WS 2 , the flat band potentials of the TiSi 2 and WS 2 -1/TiSi 2 -723 electrodes were measured respectively. The flat band potential (E fb ) was determined by the onset potential of the Mott-Schottky (M-S) plots [37]. As demonstrated in Figure 5B, both TiSi 2 and WS 2 -1/TiSi 2 -723 electrodes exhibit a positive slope, indicating an n-type semiconductor feature [38].…”
Section: Optical and Photoelectrochemical Propertiesmentioning
confidence: 99%
“…In order to further investigate the role of WS 2 , the flat band potentials of the TiSi 2 and WS 2 -1/TiSi 2 -723 electrodes were measured respectively. The flat band potential (E fb ) was determined by the onset potential of the Mott-Schottky (M-S) plots [37]. As demonstrated in Figure 5B, both TiSi 2 and WS 2 -1/TiSi 2 -723 electrodes exhibit a positive slope, indicating an n-type semiconductor feature [38].…”
Section: Optical and Photoelectrochemical Propertiesmentioning
confidence: 99%
“…Figure 6 shows the plots of 1/C 2 against the applied potential V (i.e., Mott Schottky plots) obtained at two frequencies (3000 and 5000 Hz). The MottSchottky equation is given by 42) 1…”
Section: Resultsmentioning
confidence: 99%
“…7 For pure anatase TiO 2 (the free charge carrier density is smaller than 10 19 cm -3 ), the ideal Mott-Schottky equation obtained by applying Boltzmann statistics is written as:…”
Section: Resultsmentioning
confidence: 99%
“…Further in this regime the application of Mott-Schottky equation might not be valid any more. 7 To address this issue, it was proposed that epitaxial film rather than polycrystalline porous film should be used. 8 In the present work, we have used the model system of pulsed laser deposited Ta incorporated anatase TiO 2 epitaxial thin films to examine the shift of band positions as a function of Ta concentration.…”
Section: Introductionmentioning
confidence: 99%