2010 IEEE International Memory Workshop 2010
DOI: 10.1109/imw.2010.5488406
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Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor

Byoungchan Oh
1
,
Heung-Jae Cho
2
,
Heesang Kim
3
et al.
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