Observation of thermal carrier generation in buried channel charge coupled devices

Mayer, G.

doi:10.1063/1.325650

Journal of Applied Physics

1979

DOI: 10.1063/1.325650

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Observation of thermal carrier generation in buried channel charge coupled devices

G. Mayer

Abstract: The thermal carrier generation in a buried channel charge coupled device has been observed experimentally. The generation rate decreases dramatically as the potential well fills, compared to the same characteristic in a surface channel charge coupled device.

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1983

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Evidence of stress-mediated Hg migration in Hg1−xCdxTe

Raccah

Lee

Silberman

et al. 1983

Applied Physics Letters

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Photoemission results from some 〈110〉 cleaved surfaces of Hg1−xCdxTe indicate that the Fermi level is pinned suggesting that while the bulk of the material is p type the area stressed during cleavage has been converted to n type. Electrolyte electroreflectance (EER) measurement confirmed the n-type character of the cleaved surface and showed that the alloy composition x at the surface, after cleavage, is high (x=0.22) compared to the bulk value (x=0.185). The high x value associated with the n character indicates that under stress the Hg migrates, at least partially, via the formation of donor defects. The defect density is reflected in the EER linewidth.

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Evidence of stress-mediated Hg migration in Hg1−xCdxTe

Raccah

Lee

Silberman

et al. 1983

Applied Physics Letters

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show abstract

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Observation of thermal carrier generation in buried channel charge coupled devices

Abstract: The thermal carrier generation in a buried channel charge coupled device has been observed experimentally. The generation rate decreases dramatically as the potential well fills, compared to the same characteristic in a surface channel charge coupled device.

Cited by 1 publication

References 2 publications

Evidence of stress-mediated Hg migration in Hg1−xCdxTe

Evidence of stress-mediated Hg migration in Hg1−xCdxTe

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