2015
DOI: 10.1038/ncomms6677
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Abstract: Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic localization. Theoretical studies recently suggested the possible bandgap opening and tuning. Here, we report a novel approach to producing epitaxial twisted graphene on SiC (0001) and the observation of its intrinsic bandgap behaviour. The direct deposition of C 60 on pre-grown graphene layers results in few-layer twisted graphene confirmed by angular reso… Show more

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Cited by 42 publications
(33 citation statements)
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“…In all alloyed samples a higher BE shoulder, C 2 , appears at 284.7 eV. This peak may represent sp 3 defects in graphene 29, 30 and/or C–N bonding motifs 31, 32 , and it was not possible to distinguish between the two possibilities.…”
Section: Resultsmentioning
confidence: 91%
“…In all alloyed samples a higher BE shoulder, C 2 , appears at 284.7 eV. This peak may represent sp 3 defects in graphene 29, 30 and/or C–N bonding motifs 31, 32 , and it was not possible to distinguish between the two possibilities.…”
Section: Resultsmentioning
confidence: 91%
“…The band gap in the tBLG was also observed in transport measurements in Ref. [412] (for more details about the latter reference, see next subsection).…”
Section: Hamiltonian Isĥmentioning
confidence: 64%
“…The band gap was extracted both from the IV characteristics and from the temperature dependence of the conductivity and the carriers concentration obtained by Hall measurements. Thus, the authors [412] showed that both conductivity and the concentration of the charge carriers follow the thermal activation law, ln σ, ln n ∝ ∆/T , with gap ∆ ∼ 80 meV (the estimate of the gap from the width of the flat region in the IV curve gives a much larger value of the gap). The authors explain such a big value of the band gap by the local formation of the sp 3 interlayer C-C bonding arising due to the peculiarities of the sample's preparation techniques they used.…”
Section: Tight-binding Calculations Of the Twisted Bilayer Graphene Smentioning
confidence: 99%
“…More efforts have been made to find ways of inducing a gap in graphene. There were different approaches and mechanisms and these have been proposed in both theoretical 1-8 and experimental [9][10][11][12][13][14][15] aspects. Among them, the most promising way is to use the interaction of graphene with a polar substrate to modify the linear dispersion of band structure.…”
mentioning
confidence: 99%
“…Moreover, the induced EG mechanism in this structure without crystallographic rotation angle is differ from that of the epitaxial twisted graphene in experiment. 9 They pointed out many-body interactions should play an important role in determining the EG. However, the origin of this gap is not analyzed clearly.…”
mentioning
confidence: 99%