Numerical simulation and optimization of p-NiO/n-TiO2 solar cell system using SCAPS

Mouchou, R.T.; Jen, Tien‐Chien; Laseinde, Opeyeolu Timothy; Ukoba, Kingsley

doi:10.1016/j.matpr.2020.04.880

Cited by 38 publications

(18 citation statements)

References 12 publications

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“…SCAPS simulator has exceptional features, including, but not limited to, simulating up to seven layers, calculating many parameters, like spectral response, energy bands, J-V curve, and defect density, by solving just three basic semiconductor equations. It is user friendly and may be executed in both dark and light atmospheres [ 47 , 48 , 49 ].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

2022

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Formamidinium tin iodide (FASnI3)-based perovskite solar cells (PSCs) have achieved significant progress in the past several years. However, these devices still suffer from low power conversion efficiency (PCE=6%) and poor stability. Recently, Cesium (Cs)-doped Formamidinium tin iodide (FA1−xCsxSnI3) showed enhanced air, thermal, and illumination stability of PSCs. Hence, in this work, FA1−xCsxSnI3 PSCs have been rigorously studied and compared to pure FASnI3 PSCs using a solar cell capacitance simulator (SCAPS) for the first time. The aim was to replace the conventional electron transport layer (ETL) TiO2 that reduces PSC stability under solar irradiation. Therefore, FA1−xCsxSnI3 PSCs with different Cs contents were analyzed with TiO2 and stable ZnOS as the ETLs. Perovskite light absorber parameters including Cs content, defect density, doping concentration and thickness, and the defect density at the interface were tuned to optimize the photovoltaic performance of the PSCs. The simulation results showed that the device efficiency was strongly governed by the ETL material, Cs content in the perovskite and its defect density. All the simulated devices with ZnOS ETL exhibited PCEs exceeding 20% when the defect density of the absorber layer was below 1015 cm−3, and deteriorated drastically at higher values. The optimized structure with FA75Cs25SnI3 as light absorber and ZnOS as ETL showed the highest PCE of 22% with an open circuit voltage Voc of 0.89 V, short-circuit current density Jsc of 31.4 mA·cm−2, and fill factor FF of 78.7%. Our results obtained from the first numerical simulation on Cs-doped FASnI3 could greatly increase its potential for practical production.

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Section: Introductionmentioning

confidence: 99%

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

2022

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“…If the absorber layer is too long, the generated carrier might not have a long enough lifetime to contribute to the diode's forward current [30,31]. Comparing the mobility of electrons and that of the hole, we need a thicker absorber layer when compared to the buffer layer because the carriers of each layer could reach the respective electrodes at approximately the same time [13,49].…”

Section: Resultsmentioning

confidence: 99%

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Sairam

Singh

Mamta

et al. 2023

Journal of Nanomaterials

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Thin-film-based photovoltaics offer affordable solar panels (high energy output per unit cost). Various materials have been used for thin-film solar cells, and still, new materials are being tested. In this work, the overall performance of GeSe is enhanced theoretically from a generic solar structure to a configuration that yields a whopping 33.12% efficiency along with an open circuit voltage of 1.04 V by optimizing various active layers using solar cell capacitance simulator SCAPS. The results have been explained most simply, utilizing the physics behind introducing hole transport layers in solar cells. The work also shows how certain contradictions in parameter values in the literature of GeSe can influence the cell’s performance. The result shows why the substrate structure is better than the superstrate structure. Most of the reported results are on superstrate structure, which might have caused poor performance in previously experimentally produced GeSe solar cells.

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“…In SCAPS various material parameters like thickness, band gap, permittivity, mobility etc and operating conditions like temperature, voltage, frequency, illumination can be set [37]. The uniqueness of SCAPS is that it can calculate almost all the parameters like spectral response, energy bands, ac characteristics, J-V curve and defect density [38][39][40] by just solving three basic semiconductor equations: continuity equations for both electron and holes and Poisson equation [41]. The basic sequence of operation of SCAPS software [42] is illustrated in Figure 1.…”

Section: Device Simulation Methodologymentioning

confidence: 99%

Numerical Analysis of CsSnGeI<sub>3</sub> Perovskite Solar Cells Using SCAPS-1D

Thomas¹

2021

IJEPE

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Recently, organic-inorganic perovskite-based solar cells have become promising devices due to their unique properties in the photovoltaic field. However, the factor of toxicity, stability, high production cost and complicated fabrication processes of these devices is a challenge to their progress in commercial production. Here a numerical modelling of Caesium Tin-Germanium Tri-Iodide (CsSnGeI 3 ) as an efficient perovskite light absorber material is carried out. In this paper, different inorganic Hole Transport Materials (HTMs) such as Cu 2 O, CuI, CuSbS 2 , CuSCN and NiO have been analyzed with C 60 as the Electron Transport Material (ETM). We intend to replace the conventional hole and electron transport materials such as TiO 2 and Spiro-OMeTAD which have been known to be susceptible to light induced degradation. Moreover, the influence of the Electron Transport Layer (ETL) and the perovskite layer properties, bandgap, doping concentration and working temperature for various Hole Transport Layers (HTL) on the overall cell performance have been rigorously investigated. The design of the proposed PSC is performed utilizing SCAPS-1D simulator and for optimum device an efficiency greater than 30% was obtained. The results indicate that CsSnGeI 3 and C 60 are viable candidates for use as an absorber layer and electron transport layer in high-efficiency perovskite solar cells, with none of the drawbacks that other PSCs have.

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Numerical simulation and optimization of p-NiO/n-TiO2 solar cell system using SCAPS

Cited by 38 publications

References 12 publications

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Numerical Analysis of CsSnGeI<sub>3</sub> Perovskite Solar Cells Using SCAPS-1D

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Numerical simulation and optimization of p-NiO/n-TiO2 solar cell system using SCAPS

Cited by 38 publications

References 12 publications

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Numerical Analysis of CsSnGeI&lt;sub&gt;3&lt;/sub&gt; Perovskite Solar Cells Using SCAPS-1D

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Numerical Analysis of CsSnGeI<sub>3</sub> Perovskite Solar Cells Using SCAPS-1D