Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality

He, L.; Lei, Qi; Rao, Senlin; Mao, Wei; Luo, Hongzhi; Xu, Yunfei; Zhou, Cheng; Li, Jianmin; Ding, Junling; Cheng, Xina

doi:10.1016/j.vacuum.2020.110007

Cited by 11 publications

(6 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They found that the formation of twin boundaries was always accompanied by an obvious increase in the growth rate and twins were hardly formed when the growth rate was constant at a high value. Zhai et al [55] investigated the atomic mechanism of twin formation along (111), (112), (110), and (100) planes by molecular dynamics simulations. They found that twins must Left: simplified scheme of the formation of sub-GBs from dislocation pileups starting at a grain boundary.…”

Section: Multicrystalline Grains and Twinsmentioning

confidence: 99%

“…The resultant interface shapes and contour plots of the 3D S/L height of the ingots demonstrated that the 3D S/L interface presented a distorted shape at the periphery of G8 ingot with traditional side heaters, while a nearly flat and highly symmetrical structure was achieved in the improved ones due to the greatly reduced Lorentz force density in the silicon melt. [ 111 ] He et al [ 112 ] designed an octagonal thermal field to improve the quality of ingots with larger loading capacity. Finally, they obtained a more uniform temperature distribution and lower‐temperature gradients in the octagonal furnace compared with that in the conventional furnace.…”

Section: Cost Factorsmentioning

confidence: 99%

“…Schematic of the furnace of a) top view of the conventional furnace, b) top view of the modified furnace,and c) longitudinal section view of modified furnace (left) and conventional furnace (right). Reproduced with permission [112]. Copyright 2021, Elsevier.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Huang

Yuan

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

Cast‐mono silicon (CM‐Si) is a promising substrate to fabricate cost‐effective photovoltaic (PV) wafers used for solar cells with higher efficiency compared with conventional cast multicrystalline silicon (mc‐Si) due to its high throughput and good ingot quality. However, the unavoidable appearance of defects like dislocation, subgrain boundaries, impurities, multicrystallization, and twins, seriously limits its mass‐scale applications in the PV industry. In this review, the growth characteristics of the CM‐Si method are introduced first. Then, the attention is focused on the defects in CM‐Si. Other issues related to production costs that restrict the development of CM‐Si are also addressed in detail, such as seed cost and recycled seeds, n‐type CM‐Si, and large‐size CM‐Si. Finally, a conclusion is made and the prospects are given about the CM‐Si technique.

show abstract

Section: Multicrystalline Grains and Twinsmentioning

confidence: 99%

Section: Cost Factorsmentioning

confidence: 99%

See 1 more Smart Citation

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Huang

Yuan

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Hence it exhibits longer minority carrier lifetime and higher cell efficiency than those of multicrystalline silicon (MC-Si). [1][2][3] In order to enhance the competitiveness of the MC-Si, a lot of enterprises have begun to produce cast monocrystalline silicon (CMC-Si) by directional solidification method. The CMC-Si ingots are characterized with high proportion of (100) crystallographic orientation and less grain boundaries, so the solar cell efficiency of CMC-Si is close to that of Czochralski (CZ) mono-Si, but the cost is much lower owing to the directional solidification technology.…”

Section: Introductionmentioning

confidence: 99%

A Study on Characterization and Prevention of Shadows in Cast Mono‐Crystalline Silicon Ingots

Zhou

Liu

Zhou

et al. 2022

Crystal Research and Technology

Self Cite

View full text Add to dashboard Cite

Dark shadow areas often appear in infrared images of cast monocrystalline silicon (CMC-Si) ingots. In this work, the formation of shadow and how to avoid it by optimizing the growth process are analyzed. The analysis of scanning electron microscopy & energy dispersive spectroscopy show that the shadows in CMC-Si are caused by dispersed SiC particles. These particles will further induce a great number of dislocations, subgrain boundaries, and strip-shaped grains, which decrease the quality and the minority carrier lifetime of CMC-Si. In addition, an optimized process has proposed and successfully produced a silicon ingot without any shadows. By comparing the traditional and optimized processes, the shadow formation mechanism is studied and found preventing shadow formation by keeping the liquid phase temperature gradient smooth, the maximum crystal growth rate is not more than 1.1 cm h −1 and reducing the value of G L /V below 0.235.

show abstract

“…This modification improves 0.12% conversion efficiency. [5] Numerical study was done in upgraded hot zone DS process. [6] Flat or slightly convex m-c interface obtained from modified bottom insulation.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Aravindan¹,

Manikam²,

Perumalsamy³

2021

Crystal Research and Technology

View full text Add to dashboard Cite

Multicrystalline silicon solar cells occupy 62% in crystalline silicon solar cell production. It is grown by the directional solidification process. Solidification control has a vital role in directional solidification process. Cone shape groove is made in the directional solidification block to enhance the outgoing heat flux in the center region than the peripheral region. Five directional solidification furnaces are simulated for making a multicrystalline silicon ingot. First furnace is the conventional furnace, the second furnace has 30 mm × 85 mm groove block, the third furnace has 40 mm × 85 mm groove block, the fourth furnace has 50 mm × 85 mm groove block and the fifth furnace has 60 mm × 85 mm groove block. The von Mises stress in the maximum volume of the conventional and modified grown ingots are below the range of critical value. In conventional case 7% of the ingot volume is above critical stress value and in the modified cases 2.5% of the ingot volume is above critical stress value. If axial and radial temperature gradient is combined in the 50 mm × 85 mm groove block leads to better results.

show abstract

Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality

Cited by 11 publications

References 20 publications

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

A Study on Characterization and Prevention of Shadows in Cast Mono‐Crystalline Silicon Ingots

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Contact Info

Product

Resources

About