Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

Chen, Yen‐Ting; Araki, Tsutomu; Pališaitis, Justinas; Persson, Per; Chen, Li‐Chyong; Chen, Kuei‐Hsien; Holtz, P. O.; Birch, Jens; Nanishi, Yasushi

doi:10.1063/1.4830044

Cited by 8 publications

(8 citation statements)

References 36 publications

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“…The outstanding optical properties and the nucleation mechanism of these catalyst-free GaN NWs synthesized in this method have also been investigated by numerous groups [32][33][34][35][36]. However, the existence of a compact two-dimensional (2D) GaN layer at the bottom of the NWs is commonly reported, and this may contribute to a relatively lower NW growth rate and increased difficulty in the transfer of NW ensembles [37][38][39].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the low throughput and high cost of manufacturing prevent this technology from been used in mass production. On the contrary, the use of AlN seeding layers in the nucleation of self-assembled GaN NWs on Si substrates with plasma-assisted molecular beam epitaxy (PA-MBE) has proved to be a promising synthesis method for fabricating high-quality, well-orientated GaN NW-based nanostructures on Si (111) [29][30][31][32][33][34][35][36][37][38][39]. In particular, a procedure that deposits Al initially and then transforms it into AlN, preventing the formation of SiN x at the Si/AlN interface, gives almost complete relaxation at a thickness of a few AlN monolayers [30,31].…”

Section: Introductionmentioning

confidence: 99%

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The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Liu

et al. 2019

Nanotechnology

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Gallium nitride (GaN)-based nanowires (NWs) have attracted much attention for the fabrication of novel nanostructured devices. In this paper, the influence of an AlN seeding layer on the nucleation of self-assembled GaN NWs grown by plasma-assisted molecular beam epitaxy (MBE) on Si (111) substrates has been investigated. Not only is the formation of a twodimensional compact GaN layer at the bottom of the NWs suppressed, but also a high density of vertically aligned well-separated GaN NWs originating from GaN islands are successfully obtained after introducing annealing and nitridation processes. Scanning electronic microscope and transmission electron microscope measurements show that the NWs have a high crystalline wurtzite structure nearly free of dislocations and stacking faults and the NW diameter remains constant over almost the entire length. Due to the temperature-dependent diffusion length of Ga adatoms during the nucleation process, the formation of well-separated NWs relies on the distribution and morphology of the underlying AlN seeding layer. Moreover, the SiN x layer served as mask to inhibit coalescence at the nucleation sites. The developed growth processes and the obtained results provide a viable path facilitating the use of MBE growth techniques to fabricate III-nitride NW-based materials and related devices on Si substrates.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Liu

et al. 2019

Nanotechnology

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“…The growth of binary IIIA nitride nanorods (NRs) has been approached by a diversity of methods, such as metal–organic chemical vapor deposition (MOCVD), , molecular beam epitaxy (MBE), − and magnetron sputter epitaxy (MSE). − With interplaying adatoms’ diffusion and desorption on the growth surface, both self-induced and selective-area-grown NRs can be obtained on various substrates including sapphire, SiC, Si, and metals. Notably, most growth approaches to self-induced NRs retain important methodological advantages such as simplified fabrication not requiring catalysts, advanced lithography, or substrate pre-treatments. , …”

Section: Introductionmentioning

confidence: 99%

“…Notably, most growth approaches to self-induced NRs retain important methodological advantages such as simplified fabrication not requiring catalysts, advanced lithography, or substrate pre-treatments. 9 , 10 …”

Section: Introductionmentioning

confidence: 99%

Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations

et al. 2022

Self Cite

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By addressing precursor prevalence and energetics using the DFT-based synthetic growth concept (SGC), the formation mechanism of self-induced InAlN core−shell nanorods (NRs) synthesized by reactive magnetron sputter epitaxy (MSE) is explored. The characteristics of In-and Al-containing precursor species are evaluated considering the thermal conditions at a typical NR growth temperature of around 700 °C. The cohesive and dissociation energies of In-containing precursors are consistently lower than those of their Alcontaining counterparts, indicating that In-containing precursors are more weakly bonded and more prone to dissociation. Therefore, Incontaining species are expected to exhibit lower abundance in the NR growth environment. At increased growth temperatures, the depletion of In-based precursors is even more pronounced. A distinctive imbalance in the incorporation of Al-and In-containing precursor species (namely,

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“…The InGaN layer serves as an optical landmark, which emits photons at wavelengths different from the GaN rod body. The fabrication details, structural and optical properties of this structure can be found in our previous work 4 27 .…”

Section: Methodsmentioning

confidence: 99%

Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy

Chen

Karlsson

Birch

et al. 2016

Sci Rep

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Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were measured as the diameters of the nanorods differ from 50 to 800 nm. The critical diameter of nanorods for carrier diffusion is concluded as 170 nm with a statistical approach. Photoluminescence spectra were acquired for different positions of the SNOM tip on the nanorod, corresponding to the origins of the well-defined luminescence peaks, each being related to recombination-centers. The phenomenon originated from surface oxide by direct comparison of two nanorods with similar diameters in a single map has been observed and investigated.

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Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

Cited by 8 publications

References 36 publications

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations

Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy

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