Nucleation and growth of platelet bubble structures in He implanted silicon

Fichtner, P.F.P.; Kaschny, J.R.; Kling, A.; Trinkaus, H.; Yankov, R.A.; Mücklich, A.; Skorupa, W.; Zawislak, F.C.; Amaral, L.; Silva, M.F. da

doi:10.1016/s0168-583x(97)00714-3

Cited by 34 publications

(14 citation statements)

References 10 publications

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“…The plan-view micrograph shown in Figure 1a, which was taken under kinematical imaging conditions close to a @100# zone axis orientation of the sample, demonstrates the existence of larger central cavities that are surrounded by a ring system of smaller spherical bubbles. This was also observed by Fichtner et al 1999! focusing on material implanted and annealed under comparable conditions.…”

Section: Basic Geometry and Spatial Arrangement Of The Cavitiessupporting

confidence: 77%

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Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

et al. 2004

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The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.

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Section: Basic Geometry and Spatial Arrangement Of The Cavitiessupporting

confidence: 77%

“…In previous microscopic analyses focusing on helium implantation and subsequent annealing of silicon, Fichtner et al 1999! andOliviero et al~2001!…”

Section: Ability Of the Cavities To Emit Dislocationsmentioning

confidence: 99%

Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

et al. 2004

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“…10 Thus, the high density of cavities is considered here to provide a relatively regular array of dislocation sources required for the annihilation of TDs. The generation of dislocation loops by crack-like cavities formed by H or He ion implantation has been observed after He ion implantation into Si, 13 SiC, 14 and subsequent annealing.…”

Section: ͓S0003-6951͑00͒03424-0͔mentioning

confidence: 99%

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

Trinkaus

Holländer

Rongen

et al. 2000

Applied Physics Letters

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120

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A mechanism of strain relief of H+ ion implanted and annealed pseudomorphic Si1−xGex/Si(100) heterostructures grown by molecular beam epitaxy is proposed and analyzed. Complete strain relaxation was obtained at temperatures as low as 800 °C and the samples appeared free of threading dislocations within the SiGe layer to the limit of transmission electron microscopy analysis. In our model, H filled nanocracks are assumed to generate dislocation loops, which glide to the interface where they form strain relieving misfit segments. On the basis of this assumption, the conditions for efficient strain relaxation are discussed.

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“…1 and 2) in order to determine the best condition for He bubble formation in our samples. It has been observed earlier [14] that the presence of the over-pressurized bubbles results in a strong dechanneling of the incoming beam of a particles at the depth of bubble formation.…”

Section: Results From Rbs/channeling Measurementsmentioning

confidence: 94%

Propagation of misfit dislocations from AlN/Si interface into Si

Liliental-Weber¹,

Maltez²,

Xie³

et al. 2008

Journal of Crystal Growth

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a b s t r a c tA substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.

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Nucleation and growth of platelet bubble structures in He implanted silicon

Cited by 34 publications

References 10 publications

Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

Propagation of misfit dislocations from AlN/Si interface into Si

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