Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

Oka, Kouki; Yanagida, Takeshi; Nagashima, Kazuki; Tanaka, Hidekazu; Kawai, Tomoji

doi:10.1021/ja8089922

Cited by 146 publications

(127 citation statements)

References 29 publications

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“…[1][2][3] Utilizing resistive switching between a low-resistance state (LRS) and high-resistance state (HRS), resistive random access memory serves as a potential alternative to the current flash memory for ultrahigh-density storage. Although resistive switching has been observed in various transition metal oxides, [4][5][6][7][8][9][10][11][12][13] the microscopic mechanism is not yet fully understood, which may limit its use in the integrated circuit industry. The primitive filament model 1 provided the first sketch for the conduction mechanism and stimulated later theoretical investigations 5,11,14,15 meant to elucidate various switching phenomena.…”

Section: Introductionmentioning

confidence: 99%

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Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

et al. 2014

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Reliable multilevel resistive switching in nanoscale cells is desirable for the wide adoption of resistive random access memory as the next-generation nonvolatile memory. We designed NiO-based cells in arrays of multilayered NiO/Pt nanowires to explore multilevel memory effects. Nonpolar resistive switching reproducibly occurs with significantly reduced switching voltages, narrow switching voltage distributions and a robust multilevel memory effect. A high resistance ratio (B10 5 ) between the highand low-resistance states in nanoscale cells enables stable multilevels that can be induced easily by a series of pulsed voltage. The existence of intermediate resistance states in NiO/Pt nanowire arrays can be well explained by the binary-resistor model combined with energy perturbations induced by the pulse voltage. We also verified that the conduction mechanism in multilayered NiO/Pt nanowires is dominated by the hopping of holes. Our bottom-up approach and proposed mechanism explain the controllable multilevel memory effect and facilitate sound device design to encourage their universal adoption.

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Section: Introductionmentioning

confidence: 99%

“…6,20,24 However, most nanowire-based devices exhibit large switching voltages and distributions, 24 which may partly result from the large distance between two electrodes. 12 To overcome these shortcomings, we previously developed multilayered NiO/Pt nanowire arrays with controllable and reproducible resistive transitions.…”

Section: Introductionmentioning

confidence: 99%

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

et al. 2014

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“…21 It was also found that bipolar switching from NiO-based devices requires a di®erent switching mechanism as the active materials are single crystal NiO in a nanowire structure. 22,23 From our results, the bipolar switching behavior may relate to the electrode material, as we use an Ag-coated AFM tip. The Ag can dissolve into NiO x when positive voltage is applied.…”

Section: -3mentioning

confidence: 80%

Fabrication of Resistive Random Access Memory by Atomic Force Microscope Local Anodic Oxidation

Tsai

Hsu

et al. 2015

NANO

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The fabrication of gallium, zinc and nickel oxide nanodots for application of resistive random access memory (RRAM) was demonstrated using the atomic force microscopy (AFM) local anodic oxidation technique. Thin metal¯lms were deposited on indium tin oxide conductive glass substrates. In the atmospheric environment, using AFM equipped with an Ag-coated probe can generate metal oxide nanodots locally on the metal¯lms. These nanodots act as an insulator layer in a single unit cell of the RRAM. The voltage-biased method allows devices to reset from a lowresistance state (LRS) to a high-resistance state (HRS) at 0.9 V. These results show the ability of the AFM local anodic oxidation to produce 50 nm NiO nanodots on glass substrates for potentially high-density RRAMs. As we developed the characteristics of the structure, we found that a lateral NiO nanobelt RRAM performs very low power operation from such experimental manufacturing process. Using a current-biased method, the lateral device switches from a HRS to a LRS with a low writing voltage of 0.64 V.

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“…In order to understand the essence of EPIR, a large variety of EPIR-materials were investigated, including binary oxides NiO [9][10][11] , ZrO 2 [12][13] and HfO 2 [14][15][16] as well as complex oxides such as Pr 1 -x Ca x MnO 3 [17][18] , BiFeO 3 [19][20][21] , and SrTiO 3 [22][23][24] . In terms of description we can roughly categorize them into two groups of redox and defects.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen vacancies on the EPIR effect in Nd0.7Sr0.3MnO3 ceramics

Shi

Chen

Liu

et al. 2015

Current Applied Physics

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Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

Cited by 146 publications

References 29 publications

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Fabrication of Resistive Random Access Memory by Atomic Force Microscope Local Anodic Oxidation

Influence of oxygen vacancies on the EPIR effect in Nd0.7Sr0.3MnO3 ceramics

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