Superlattices and Microstructures volume 45, issue 4-5, P301-307 2009 DOI: 10.1016/j.spmi.2008.10.045 View full text
A.E. Chernyakov, M.M. Sobolev, V.V. Ratnikov, N.M. Shmidt, E.B. Yakimov

Abstract: a b s t r a c tComplex investigations, including measurements of C -V curves, studies of I-V curves in the 10 mV-5 V voltage and 10 −14 -1 A current ranges and QE(I) dependences, were carried out on the set of InGaN/GaN LEDs with different active region designs, and with different maximum external quantum efficiency (QE), changing from 16% to 40%.Common regularities of carriers transport for all investigated LEDs were found. They were independent of barriers height and width, number of wells and nanostructura…

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