Non-Lithographic Growth of Core–Shell GaAs Nanowires on Si for Optoelectronic Applications

Bae, Myung‐Ho; Kim, Bum-Kyu; Ha, Dong-Han; Lee, Sang Jun; Sharma, Rohan; Choi, Kyoung Jin; Kim, Ju‐Jin; Choi, Won Jun; Shin, Jae Cheol

doi:10.1021/cg401520q

Cited by 13 publications

(11 citation statements)

References 33 publications

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“…This finding has important implications for NW-based devices that require a high radiative recombination intensity and/or long radiative lifetime, e.g. LEDs [191][192][193], lasers [194,195] and solar cells [29,32,134].…”

Section: Discussionmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

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Section: Discussionmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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“…The bottom-up growth of vertical freestanding nanowires enables heteroepitaxy with large lattice mismatch due to elastic deformation occurred at heterogeneous interfaces. 1,2 This capability leads to the hybrid integration of III-V nanowire-based electrical and optical devices on silicon/silicon-on-insulator (Si/SOI) platforms, including field-effect transistors, [3][4][5] lasers, [6][7][8][9] light-emitting diodes, [10][11][12][13][14][15][16][17][18] photodetectors, 19,20 and solar cells. [21][22][23][24][25][26] To develop those devices with high performance, it is significant to explore material properties and understand carrier dynamics of freestanding nanowires.…”

Section: Introductionmentioning

confidence: 99%

Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

et al. 2018

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Time-resolved photoluminescence (TRPL) has been implemented experimentally to measure the carrier lifetime of semiconductors for decades. For the characterization of nanowires, the rich information embedded in TRPL curves has not been fully interpreted and meaningfully mapped to the respective material properties. This is because their three-dimensional (3-D) geometries result in more complicated mechanisms of carrier recombination than those in thin films and analytical solutions cannot be found for those nanostructures. In this work, we extend the intrinsic power of TRPL by developing a full 3-D transient model, which accounts for different material properties and drift-diffusion, to simulate TRPL curves for nanowires. To show the capability of the model, we perform TRPL measurements on a set of GaAs nanowire arrays grown on silicon substrates and then fit the measured data by tuning various material properties, including carrier mobility, Shockley-Read-Hall recombination lifetime, and surface recombination velocity at the GaAs-Si heterointerface. From the resultant TRPL simulations, we numerically identify the lifetime characteristics of those material properties. In addition, we computationally map the spatial and temporal electron distributions in nanowire segments and reveal the underlying carrier dynamics. We believe this study provides a theoretical foundation for interpretation of TRPL measurements to unveil the complex carrier recombination mechanisms in 3-D nanostructured materials.

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“…[11][12][13] Among the known metal borates, nickel borate (Ni 3 (BO 3 ) 2 ) is of great interest because of its magnetic, phosphorescent, catalytic, electrochemical and biological properties. [14][15][16][17][18] Since Ni 3 (BO 3 ) 2 was rst synthesized in 1963 by W. Götz,19 various methods of fabricating Ni 3 (BO 3 ) 2 have been reported, including solid-state reaction, 18,19 a reverse micellar route, 15 a precursor-mediated route, 16 thermal conversion, 17 and high-temperature melting reaction. 20 However, only a few studies have addressed the synthesis of 1D Ni 3 (BO 3 ) 2 structures, especially Ni 3 (BO 3 ) 2 nanowhiskers.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic growth of Ni₃(BO₃)₂ nanowhiskers on nickel substrates and its application in the fabrication of superhydrophilic surfaces

Wang

Feng

et al. 2015

RSC Adv.

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One-dimensional (1D) single-crystalline nickel borate [Ni 3 (BO 3 ) 2 ] nanowhiskers were successfully grown on Ni substrates using the facile molten-salt method in air with MnO 2 as the agent. The products were characterized via X-ray diffraction, scanning electron microscopy, and transmission electron microscopy.The Ni 3 (BO 3 ) 2 nanowhiskers that were synthesized at 950 C, with diameters ranging from 120 to 250 nm and lengths of up to 50 mm, possessed an ultra-high aspect ratio (more than 100 : 1) and were found to grow along the [021] crystallographic direction. The effects of the growth temperature, holding time and amount of agent on the product morphology were investigated in detail. The products retained a nanowhisker morphology at growth temperatures below 1000 C but transformed into microtubes when synthesized at 1050 C. The oxygen liberated by the manganese oxides facilitated the nucleation of Ni 3 (BO 3 ) 2 nanowhiskers. In addition, the surfaces coated with the Ni 3 (BO 3 ) 2 nanowhiskers exhibited good superhydrophilic properties, and the wetting dynamics of such surfaces was investigated.

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Non-Lithographic Growth of Core–Shell GaAs Nanowires on Si for Optoelectronic Applications

Cited by 13 publications

References 33 publications

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

Anisotropic growth of Ni₃(BO₃)₂ nanowhiskers on nickel substrates and its application in the fabrication of superhydrophilic surfaces

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Non-Lithographic Growth of Core–Shell GaAs Nanowires on Si for Optoelectronic Applications

Cited by 13 publications

References 33 publications

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

Anisotropic growth of Ni3(BO3)2 nanowhiskers on nickel substrates and its application in the fabrication of superhydrophilic surfaces

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Anisotropic growth of Ni₃(BO₃)₂ nanowhiskers on nickel substrates and its application in the fabrication of superhydrophilic surfaces