2000
DOI: 10.1002/1099-0712(200011/12)10:6<273::aid-amo426>3.3.co;2-6
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Non‐linear charge conduction and emission behaviour of OELD fabricated with Alq3 and TPD‐doped soluble polyimide

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Cited by 14 publications

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“…The J-V plot shows the typical regimes such as an ohmic (m ) 0.3), a space charge limited (m ) 1), a trap charge limited (m ) 1.7), and a trap-free space charge limited (m ) 1) in the power-law model (J ≈ V m+1 ). 51 In addition to the typical regimes, another regime (m ) 0.3) similar to an ohmic was observed at high electric field. From the relatively low m value compared to the other reports, 51 it is considered that a small trap state exists in the present HOD even though the device passes hole car-riers only.…”
Section: Results
mentioning
confidence: 75%
“…51 In addition to the typical regimes, another regime (m ) 0.3) similar to an ohmic was observed at high electric field. From the relatively low m value compared to the other reports, 51 it is considered that a small trap state exists in the present HOD even though the device passes hole car-riers only. The ionization potential of the PI thin film on the ITO substrate was obtained as 5.12 eV by the ultraviolet photoelectron spectroscopy (UPS) method described in the previous work.…”
Section: Results
mentioning
confidence: 75%
“…The current density−voltage ( J − V ) characteristic of the HOD fabricated with the PI thin film is shown in Figure . The J − V plot shows the typical regimes such as an ohmic ( m = 0.3), a space charge limited ( m = 1), a trap charge limited ( m = 1.7), and a trap-free space charge limited ( m = 1) in the power-law model ( J ≈ V m +1 ) . In addition to the typical regimes, another regime ( m = 0.3) similar to an ohmic was observed at high electric field.…”
Section: Results
mentioning
confidence: 91%
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