Non-Destructive Screening for Thermal Second Breakdown

Tasca, Dante M.; Peden, Joseph C.; Miletta, J.

doi:10.1109/tns.1972.4326809

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1974

2021

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Cited by 8 publications

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“…Since the RIBV is a thermal effect, it will increase directly with the power density in the normally conducting part of the junction. The crowded and noncrowded parts of the junction are considered as two parallel resistances, and P1 can be found by changing all the subscripts 1 to 2 and vice versa, from equation (2).…”

Section: Discussionmentioning

confidence: 99%

Susceptibility of Semiconductor Devices to Thermal Second Breakdown

Cohn¹

1974

12th International Reliability Physics Symposium

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A method for determining the susceptibility of semiconductor devices to damage from an electromagnetic pulse (EMP) due to induced thermal second breakdown is described. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given device type. A mathematical explanation is presented, and other tentative applications are proposed.

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Section: Discussionmentioning

confidence: 99%