2001
DOI: 10.1023/a:1006734100499
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Cited by 107 publications
(37 citation statements)
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“…As it is shown in Table , with increasing Si/P ratio, the contribution of the Si–N 4 species does not show obvious change for the three LiSiPON films, while the decrease of the Si–O–Li is counter‐balanced by the increase of the O x –Si–N y tetrahedron species. We did not find obvious peak related to SiO 2 (Si–O 4 tetrahedron), which should be positioned at above 103.0 eV .…”
Section: Resultsmentioning
confidence: 53%
“…As it is shown in Table , with increasing Si/P ratio, the contribution of the Si–N 4 species does not show obvious change for the three LiSiPON films, while the decrease of the Si–O–Li is counter‐balanced by the increase of the O x –Si–N y tetrahedron species. We did not find obvious peak related to SiO 2 (Si–O 4 tetrahedron), which should be positioned at above 103.0 eV .…”
Section: Resultsmentioning
confidence: 53%
“…However, for pristine Si NPs, the formation of surface SiÀ OH groups through a dissociative chemisorption process in ambient environment also results in negative surface charge. [16] Therefore, the combination of Ti 3 C 2 T x nanosheets and pristine Si NPs without APTES functionalization cannot afford a strong adhesion due to their repulsion. Here, it should be pointed out that only by the drip adding for NH 2 À Si NP suspension, rather than one-step direct mixing, ordered multilayer NH 2 À Si/Ti 3 C 2 T x hybrid with the crosslinking structure could be prepared with sufficient time to achieve the electrostatic attraction of two species completely.…”
Section: Resultsmentioning
confidence: 99%
“…[25] And the shoulder peak at 283.5 eV ascribed to the CÀ Si bond [26] has lower intensity than that for SiC surface, further verifying the elimination of Si species to produce a C-rich surface. For SiO 2 / SiC support surface, a respective intense peak at 103.5 eV in Si 2p line ( Figure 2c) and at 532.6 eV in O 1s line ( Figure 2d) attributes to SiÀ O bond in SiO 2 , [27,28] indicating the existence of silica surface after thermal treatment in air. For SiC and C/SiC surfaces, the peak at the binding energy of 102.0 eV is deemed as silicon oxocarbide [29] instead of SiÀ C bond.…”
Section: Structural Characterizations Of the Supportsmentioning
confidence: 98%