Abstract:Abstract-Characteristics of n-channel MOSFET's fabricated in cold cathode electron-beam-recrystallized silicon-onoxide layers have been examined. Assorted crystallographic defects exist in the recrystallized silicon layer ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these MOSFET transistors have characteristics aPfroaching those fabricated in bulk silicon including = 828-cm /V . s electron surface mobilities and 130-m V/ decade… Show more
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