1995
DOI: 10.1063/1.114800
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Abstract: 4H-SiC epilayers grown by chemical vapor deposition were characterized by Hall effect, admittance spectroscopy, low-temperature photoluminescence, and deep level transient spectroscopy (DLTS). The nitrogen (N) donor activation energies were estimated as 45–65 meV at hexagonal and 105–125 meV at cubic sites from Hall effect investigations in agreement with the data taken by admittance spectroscopy. In low-temperature photoluminescence, the N bound exciton peaks were dominant, however, free exciton peaks were al… Show more

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Cited by 113 publications
(55 citation statements)
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“…These defects (E 0.10 and E 0.63 ) were attributed to nitrogen impurities and carbon vacancies, respectively. We believe that the decrease in the relatively shallow E 0.10 , which is ascribed to nitrogen impurities [30], was due to a lowering of the Fermi level because of deep levels in the band gap. The decrease in the E 0.63 , which is ascribed to the carbon vacancy, could be due to some of the vacancies being filled by diffusing interstitials.…”
Section: Resultsmentioning
confidence: 99%
“…These defects (E 0.10 and E 0.63 ) were attributed to nitrogen impurities and carbon vacancies, respectively. We believe that the decrease in the relatively shallow E 0.10 , which is ascribed to nitrogen impurities [30], was due to a lowering of the Fermi level because of deep levels in the band gap. The decrease in the E 0.63 , which is ascribed to the carbon vacancy, could be due to some of the vacancies being filled by diffusing interstitials.…”
Section: Resultsmentioning
confidence: 99%
“…The defects labelled E 0.09 and E 0.10 have identical level, and slightly different energy. The E 0.09/0.10 has been assigned to nitrogen impurities that occupy the cubic site [18]. The defect labelled E 0.39 with energy, 0.39 eV below the conduction band emanated after the diode received a fluence of 4.1×10 11 alpha-particle-cm -2 from a 241 Am source.…”
Section: Conventional Dlts Analysismentioning
confidence: 99%
“…The Z 1 /Z 2 center in 4H-SiC (~0.65 eV below the conduction band minimum E C ) detected by deep level transient spectroscopy (DLTS) [72,73] is known to be a negative-U system having two higher-lying excited levels Z 1 (at E C -0.52 eV) and Z 2 (at E C -0.45 eV) [74]. This center is the lifetime killing defect in SiC grown by chemical vapour deposition (CVD) [50,51,[75][76][77].…”
Section: Negative-u Center Z 1 /Z 2 In 4h-sicmentioning
confidence: 99%
“…This center is the lifetime killing defect in SiC grown by chemical vapour deposition (CVD) [50,51,[75][76][77]. The Z 1 /Z 2 is one of the most common deep levels in as-grown material [73] and very thermally stable [72]. Since this center governs the carrier lifetime in as-grown CVD epitaxial layers [50,51,[75][76][77], it had been intensively studied.…”
Section: Negative-u Center Z 1 /Z 2 In 4h-sicmentioning
confidence: 99%