Nitride LEDs and Lasers with Buried Tunnel Junctions

Turski, Henryk; Siekacz, M.; Muzioł, G.; Hajdel, Mateusz; Stanczyk, Szymon; Żak, Mikołaj; Chlipała, Mikołaj; Skierbiszewski, C.; Bharadwaj, Shyam; Xing, Huili Grace; Jena, Debdeep

doi:10.1149/2.0412001jss

Cited by 14 publications

(7 citation statements)

References 17 publications

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“…In III-nitride tunnel junctions, the piezo-fields can be used to increase the tunneling current [ 10 , 11 , 12 ]. Great limitation of the electron overflow over the quantum wells can be achieved by changing the alignment of the polarization fields, thanks to the tunnel junction placed on bottom of the structure [ 13 , 14 ]. The concept of doping via polarization fields was shown in various III-N devices [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

et al. 2021

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The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses—2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger–Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one.

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Section: Introductionmentioning

confidence: 99%

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

et al. 2021

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“…In fact, the positive and negative bias conditions of the BD LED can be directly compared to III-N LEDs grown on Ga-polar and N-polar GaN substrates, respectively. In such LEDs, the differences in the injection e ciencies for structures with various polarities have been widely discussed [19][20][21][22][40][41][42] . In the case of Gapolar structures, low injection e ciency and electron over ow above the QW is a commonly known issue.…”

Section: Discussionmentioning

confidence: 99%

“…It should be emphasized here that during the last decade III-nitride TJs have reached maturity and a high tunneling current under low operating voltage 8,16−18 . E cient TJs are used to control the arrangement of piezoelectric elds in the active region [19][20][21][22] , to stack several LEDs or laser diodes (LDs) for multiplying the optical power or obtaining multi wavelength optical spectrum [23][24][25][26][27] , to control current ow in micro LEDs [28][29][30][31] , in distributed-feedback LDs 32 or in tunneling eld-effect transistors 33 .…”

Section: Introductionmentioning

confidence: 99%

Bidirectional LED as an AC-driven visible-light source

Żak

Muzioł

Siekaz

et al. 2023

Preprint

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The GaN-based light emitting diodes (LEDs) brought a revolution in the lighting market by becoming the most energy-efficient light sources. However, the power grid, i.e. electricity delivery system, is built based on alternating current (AC), which raises problems for directly driving LEDs that require direct current (DC) to operate effectively. In this paper, we demonstrate a proof of concept device that addresses this fundamental issue – a GaN-based bidirectional light emitting diode (BD LED). The BD LED structure is symmetrical with respect to the active region, which, depending on the negative or positive bias, allows for the injection of either electrons or holes from each side. It is composed of two tunnel junctions that surround the active region. The optical and electrical properties of such BD LEDs under DC and AC conditions are investigated. We find that the light is emitted in both directions of supplied current, contrary to the standard LEDs, hence BD LEDs can be considered as a semiconductor light source powered directly with AC. In addition, we show that BD LEDs can be stacked vertically to multiply the optical power achieved from a single device.

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“…The efficient LED with the aforementioned "III-polar, pdown" structure has been demonstrated in blue and green regions by different growth techniques including metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE). To improve the hole injection, the band-to-band tunneling junction (TJ) with the n + GaN/InGaN/p-GaN structure was specifically designed for the p-layer [7,8]. The single heterostructure with p-GaN/n-InGaN also showed visible light emission [9].…”

Section: Introductionmentioning

confidence: 99%

UV Light-Emitting Diode With Buried Polarization- Induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction

Wang

Oliveira

et al. 2021

IEEE Photon. Technol. Lett.

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The polarization-induced electric field in the IIInitride UV light-emitting diode (LED) allows for significant flexibility in device design to address the electron overflow and hole injection issues. The conventional AlGaN-based UV LED with the PIN structure suffers from insufficient carriers especially hole concentration due to the large valence band barrier for hole injection and p-type doping challenge. Our systematic study reveals that the inverse design of the n-type and p-type layer shall build an opposite polarization-induced field to suppress electron overflow as well as simultaneously enhance hole injection. To design this p-side down UV LED and improve the hole injection, we adopt the n-AlGaN/i-InGaN/p-AlGaN buried tunneling junction (BTJ) instead of the bottom p-layer. The tunneling probability and output power of the LED are further investigated by optimizing the composition and thickness of the InGaN layer. Simulation results show that the optimized 3 nm In0.3Ga0.7N tunneling layer could lead to several orders of magnitude enhancement for LED output power. This study is significant for the pursuit of highly efficient UV LEDs.

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Nitride LEDs and Lasers with Buried Tunnel Junctions

Cited by 14 publications

References 17 publications

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Bidirectional LED as an AC-driven visible-light source

UV Light-Emitting Diode With Buried Polarization- Induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction

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