Nitride-Clad LOCOS Isolation For 0.25/spl mu/m CMOS

Pfiester,; Kenkare,; Subrahmanyan,; Lin, Kun-You; Crabtree,

doi:10.1109/vlsit.1993.760287

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Reduction Of Oxide Punchthrough1

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Cited by 10 publications

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“…Figure 8 presents TEM micrographs taken following 5000A field oxidation of a Nitride-Clad LOCOS (NCL) stack consisting of 2000A nitride / 150A oxide and a lOOA nitride cladding layer [7]. Unlike LOCOS, both the wide (>5p.m) and narrow lines have small birds beaks without defect creation.…”

Section: Reduction Of Oxide Punchthroughmentioning

confidence: 99%

Sensitivity of field isolation profiles to active pattern

Kenkare

Pfiester

Hayden

et al.

Proceedings of IEEE International Electron Devices Meeting

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The birds beak profile for LOCOS-based isolations is shown to be a strong function of the patterned nitride width. In particular, the bird's beak height is found to be much smaller for intermediate widths (-0.6pm) than for either very wide or very narrow nitride lines. These width-dependent phenomena are explained using simulation. Furthermore, the use of Atomic Force Microscopy (AFM) is presented as a convenient approach for quantifying the 2-D encroachment effects common to all LOCOS-based schemes.

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Section: Reduction Of Oxide Punchthroughmentioning

confidence: 99%