2013
DOI: 10.1021/am402550s
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Abstract: We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts under a global laser irradiation scheme. The nonlinearship, asymmetric, and unsaturated characteristics of the I-V curves reveal that two uneven back-to-back Schottky contacts are formed. First-principles calculations indicate that the occurrence of defects-induced in-gap defect… Show more

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Cited by 215 publications
(208 citation statements)
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“…The optimized photoresponsivity can reach 1.6 × 10 5 A W −1 (under illumination of 532 nm light), which is about five orders of magnitude higher than those of previously reported GeSe‐based photodetectors13, 22 and 100 times higher than that of monolayer MoS 2 23. As far as we know, this is better than most reported responsivities of similarly structured phototransistors based on single pristine 2D materials13, 22, 23, 24, 25, 26, 27, 28 without further hybridization and functionalization. The high responsivity can be attributed to the highly efficient light absorption as well as the enhanced photoconductive gain resulting from the existence of trap states.…”
Section: Introductionmentioning
confidence: 71%
See 1 more Smart Citation
“…The optimized photoresponsivity can reach 1.6 × 10 5 A W −1 (under illumination of 532 nm light), which is about five orders of magnitude higher than those of previously reported GeSe‐based photodetectors13, 22 and 100 times higher than that of monolayer MoS 2 23. As far as we know, this is better than most reported responsivities of similarly structured phototransistors based on single pristine 2D materials13, 22, 23, 24, 25, 26, 27, 28 without further hybridization and functionalization. The high responsivity can be attributed to the highly efficient light absorption as well as the enhanced photoconductive gain resulting from the existence of trap states.…”
Section: Introductionmentioning
confidence: 71%
“…As far as we know, this is better than most reported responsivities of similarly structured phototransistors based on single pristine 2D materials28, 54 without further hybridization and functionalization. The comparison of photodetectors based on different 2D materials is summarized in Table 1 13, 22, 23, 24, 25, 26, 27, 28. The intrinsic responsivity R 0 and the photoconductive gain G both contribute to the total responsivity:55 Rλ=R0G=ηehvG, where η is the quantum efficiency and υ is the frequency of incident light.…”
Section: Resultsmentioning
confidence: 99%
“…In general, GIVMCs have been classified into two groups according to their chemical compositions: MX (SiC,89 SiS,90 GeS,91, 92 GeSe,93, 94, 95, 96 SnS,97, 98, 99 SnSe,100, 101, 102, 103, 104, 105, 106, 107, 108 SnTe,109, 110) and MX 2 (GeS 2 ,111 GeSe 2 ,112, 113, 114, 115 SnS 2 ,72, 116, 117, 118 SnSe 2 73, 119, 120, 121, 122, 123, 124, 125). In this part, some typical GIVMCs are presented in Table 1 .…”
Section: Crystal Structuresmentioning
confidence: 99%
“…Additionally, GeSe has a direct bandgap at monolayer or bilayer 103. There are many reports on the photodetectors based on 2D GIVMCs showing high performance as summarized in Table 2 75, 92, 93, 94, 95, 120, 130, 142, 149. We will review some typical photodetectors in this section.…”
Section: Device Applicationsmentioning
confidence: 99%
“…Similarly, GeSe is an isoelectronic counterpart to the group V semiconductors and has the same layered structures. α-GeSe nanosheets have been synthesized by several methods and applied in photodetector devices [11,12]. The semiconducting electronic properties of α-GeSe have been confirmed by a recent theoretical investigation [26].…”
mentioning
confidence: 96%