Ni addition effects on physical properties of spin-coated Sb2S3 semiconducting compound thin films

Zhang, Mao; Yoo, Dayoung; Kang, Yeojin; Park, Wonjung; Lee, Je In; Kim, Jae Won; Hwang, Yoon‐Hwae; Lee, Dong−Yun

doi:10.1016/j.apsusc.2022.155022

Cited by 6 publications

(4 citation statements)

References 37 publications

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“…32,35 In addition, since Cu 2 S, which is formed by the combination of sulfur in activated polysulfide with rapidly diffusing copper, is a monoclinic structure, it is believed to grow as a vertically aligned nanostructure. 32 As shown in our previous research, 30 spin-coating pure Sb 2 S 3 precursor solution on gold-coated FTO glass would form Sb 2 S 3 pillars with single crystal nature because of the formation of the AuSb 2 at lower temperature and then formation temperature of Sb 2 S 3 crystal. 36 The evolution of surface morphologies of Sb 2 S 3 /Cu 2 S complex compound with the increasing addition amount of Cu 2 S powder from 0.3 to 3 g is listed in Figure 2a− c, it can be seen that all the samples grow out-of-plane and it grew like a cudgel shape with adding Cu 2 S. The surface morphologies of Sb 2 S 3 without addition of Cu 2 S powders are shown in Figure S3b, and Sb 2 S 3 pillars formed well on the gold-coated FTO glass substrates.…”

Section: ■ Introductionmentioning

confidence: 79%

“…After mixing all the above reagents and stirring for 30 min, a Sb 2 S 3 precursor solution was made. The detailed preparation process has been described in our previous study. , Finally, Cu 2 S powder was added from 0.1 up to 3 g to the Sb 2 S 3 precursor solution and stirred with a magnetic stirrer for 30 min to get the mixed solution. Then, the Sb 2 S 3 /Cu 2 S complex compound was synthesized on the Au-coated FTO glass substrate through the same process as in the preparation of the Sb 2 S 3 structure.…”

Section: Methodsmentioning

confidence: 99%

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Effects of Low-Dimensional Cu₂S Nanostructures on the Mechanical Properties of Sb₂S₃ Semiconducting Compounds

et al. 2023

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In this study, a Sb2S3–Cu2S composite was synthesized by adding Cu2S, which exhibits a negative Poisson’s ratio in a two-dimensional structure, to improve the mechanical properties of the Sb2S3 compound semiconductor. The sol–gel method was used for the preparation of Sb2S3 precursor solution and after mixing synthesized by heat treatment at 260–280 °C. Cu2S growing in a plate-like structure with the Cu2S powders prepared by performing a sulfurization of Cu using polysulfide, it was spin-coated on gold-coated FTO glass substrates. Finally, the Cu2S powders were chemically combined with Sb2S3 pillars to grow in the form of cudgels with acicular structures attached to the pillar structure. The acicular structure attached to the surface of the Sb2S3 pillar structure was observed to be calcostibite (CuSbS2). The mechanical energy absorption of the bare Sb2S3 pillar and Sb2S3–Cu2S cudgels structures was measured through nanoindentation experiments of flat-top tip with a diameter of 2 μm. It was observed that the external energy absorption (energy dissipation) ability of the Sb2S3–Cu2S cudgels structure was improved by more than five times which was compared to the bare Sb2S3 pillar structure.

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Section: ■ Introductionmentioning

confidence: 79%

Section: Methodsmentioning

confidence: 99%

Effects of Low-Dimensional Cu₂S Nanostructures on the Mechanical Properties of Sb₂S₃ Semiconducting Compounds

et al. 2023

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“…[150][151][152] Ni settled at the grain boundaries and formed Ni x S y at lower temperatures, which provided nucleation centers for the [hk1]-oriented growth of Sb 2 S 3 ribbons. 153 An improvement of up to six orders in p-type conductivity (from 10 À8 to 10 À2 S cm À1 ) was demonstrated in Sb 2 S 3 films on C doping. 154 The increased electrical conductivity was attributed to the formation of C S substitutional defects in the Sb 2 S 3 crystal structure.…”

Section: Doping Strategiesmentioning

confidence: 97%

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

Barthwal,

Singh,

Chauhan

et al. 2023

Mater. Adv.

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“…Various bulk defects, such as sulfur vacancy defects (V S ), antisite defects of Sb and S (Sb S ), and surface oxide (Sb 2 O 3 ), strongly influence the performance of Sb 2 S 3 solar cells [8]. Several methods, such as chemical bath deposition, thermal evaporation, flash evaporation, and spray pyrolysis, have been employed for the growth of Sb 2 S 3 thin films [9][10][11][12]. Thermal evaporation is one of the most commonly used physical processes for producing homogenous Sb 2 S 3 films [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Two-step synthesis of antimony sulfide thin films: enhancement in physical properties through sulfurization

D M,

Prabhu,

Choudhari

et al. 2024

Mater. Res. Express

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Recently, there has been an increase in the use of antimony sulfide (Sb2S3) in Si-based tandem solar cells as a potential absorber material for top sub-cells. The choice of the material stems from the favoured properties such as appropriate bandgap, simple binary composition, nontoxic elements, and long-term stability. However, the physical properties and practical applicability of these materials depend largely on their synthesis conditions. In this work, we investigate the role of sulfurization on the structural, morphological, compositional, and optical properties of Sb2S3 thin films deposited on soda-lime glass via a thermal evaporation technique. Sulfurization was performed on the as-prepared thin films in a customized Chemical Vapor Deposition (CVD) chamber at five different temperatures. Analysis of the crystallinity of the film using the X-ray diffraction technique illustrates the transformation of the film from impure, poor crystalline phase to phase-pure, and highly crystalline orthorhombic structure due to sulfurization. Scanning electron microscopic investigations of the samples revealed better grains with nanorods on the surface at a temperature of 4000C. For the samples investigated here, the energy values estimated via density functional theory (DFT) calculations agreed well with the experimental data obtained from UV-visible absorption spectral studies. Additionally, it was observed that the desired near-stoichiometric Sb2S3 thin films could be achieved via sulfurization, and the presence of Sb2S3 in all samples was confirmed via Raman spectroscopic studies. Additionally, the defects and trap states of the prepared films were investigated using photoluminescence studies, and donor and acceptor defects were identified. Our study revealed that sulfur rich Sb2S3 films prepared at a sulfurization temperature of 400°C produced the desired structure, morphology, and optical qualities for future photovoltaic applications.

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Ni addition effects on physical properties of spin-coated Sb2S3 semiconducting compound thin films

Cited by 6 publications

References 37 publications

Effects of Low-Dimensional Cu₂S Nanostructures on the Mechanical Properties of Sb₂S₃ Semiconducting Compounds

Effects of Low-Dimensional Cu₂S Nanostructures on the Mechanical Properties of Sb₂S₃ Semiconducting Compounds

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

Two-step synthesis of antimony sulfide thin films: enhancement in physical properties through sulfurization

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Ni addition effects on physical properties of spin-coated Sb2S3 semiconducting compound thin films

Cited by 6 publications

References 37 publications

Effects of Low-Dimensional Cu2S Nanostructures on the Mechanical Properties of Sb2S3 Semiconducting Compounds

Effects of Low-Dimensional Cu2S Nanostructures on the Mechanical Properties of Sb2S3 Semiconducting Compounds

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

Two-step synthesis of antimony sulfide thin films: enhancement in physical properties through sulfurization

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Effects of Low-Dimensional Cu₂S Nanostructures on the Mechanical Properties of Sb₂S₃ Semiconducting Compounds

Effects of Low-Dimensional Cu₂S Nanostructures on the Mechanical Properties of Sb₂S₃ Semiconducting Compounds