New insights into the photoassisted anodic reactions of n-type 4H SiC semiconductors
Katharina Mairhofer,
Silvia Larisegger,
Annette Foelske
et al.
Abstract:This study aims to investigate the photoelectrochemical behavior of the n-type 4H-SiC, focusing on aqueous, hydroxide-based electrolytes. Despite its high stability, this wide-bandgap semiconductor material undergoes electrochemical reactions, such as anodic oxidation or etching, under specific conditions. Since electrons are the majority charge carriers in n-type semiconductors, oxidation processes require above-bandgap illumination. Then, the reaction rate is influenced by the number of electron holes availa… Show more
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