New grain-oriented silicon steel with high permeability "ORIENTCORE HI-B"

Taguchi, Satoru; Yamamoto, Takumi; Sakakura, Akira

doi:10.1109/tmag.1974.1058316

Cited by 83 publications

(25 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The production method of HGO 10) was announced using A1N and MnS as inhibitors manufactured by one stage cold rolling method. Only in the specimen containing both AlN and MnS normal grain growth was inhibited and successfully secondary recrystallization was obtained.…”

Section: Introductionmentioning

confidence: 99%

Onset of Secondary Recrystallization in High Purity 3.3%Si Steel

Hayakawa¹,

Omura²,

Imamura³

2014

ISIJ Int.

View full text Add to dashboard Cite

Possibility of the occurrence of secondary recrystallization in high purity material without containing inhibitor elements was investigated experimentally. Only in the sample with primary recrystallization annealing performed at 900°C, onset of secondary recrystallization was observed. The orientation of secondary recrystallized grains proved to be (110)[001] (Goss) orientation. It was also shown that normal grain growth was suppressed in the sample in which secondary recrystallization occurred. Narrow grain size distribution and strong texture accumulation were considered to help the stabilization of the matrix grains.Texture development during secondary recrystallization in the absence of inhibitors was discussed based on proposed growth models. It was shown from Grain Boundary Character Distribution (GBCD) analysis that the High Energy (HE) boundary model was applicable to secondary recrystallization and the Solid State Wetting (SSW) model was applicable to normal grain growth. The HE boundary was related theoretically to high mobility through high grain boundary diffusion coefficient. It was considered that reducing impurity elements exerted inherent high mobility of the HE boundary and hence led to the onset of the secondary recrystallization.

show abstract

Section: Introductionmentioning

confidence: 99%

Onset of Secondary Recrystallization in High Purity 3.3%Si Steel

Hayakawa¹,

Omura²,

Imamura³

2014

ISIJ Int.

View full text Add to dashboard Cite

show abstract

“…Discussion includes (1) how the {110} oriented grains occur in the primary recrystallization matrix, (2) what qualifies the {1 1 O} > oriented grains for viable nuclei of secondary recrystallization, and howthey can grow at the expense of surrounding grains for perfection of secondary recrystallization, (3) how the {1 10}…”

mentioning

confidence: 99%

Texture control in the production of grain oriented silicon steels.

1989

View full text Add to dashboard Cite

“…These particle inhibitors, along with the manufacturing route, generate differences in the spread of the Goss orientation at the end of the secondary recrystallization annealing, typically at ~950°C. In HGO steels, the maximum deviations from the ideal Goss orientation remain limited to 3-4°, 2,5) but in CGO steels the orientation spread is somewhat larger (7-15°). 2,6) As a result the HGO and CGO sheets exhibit permeability values of 1.92 T and 1.83 T, respectively, under an applied electric field of 800 Am In spite of extensive research for almost a century on these steels, understanding of the driving forces for the abnormal growth of Goss grains has yet to reach a consensus.…”

Section: Introductionmentioning

confidence: 94%

Grain Boundary Deformation Phenomena and Secondary Growth of Goss Grains in a Fe-3.5%Si Steel

2017

View full text Add to dashboard Cite

In this investigation, a long-standing grain growth question is addressed in a Fe-3.5% Si steel. This material undergoes secondary growth of Goss oriented grains, but the underlying mechanisms of this growth remain unresolved despite extensive investigations for almost a century. In this investigation, a key question concerning this subject is resolved i.e. whether the nature of primary recrystallization grain boundaries solely determines the growth of Goss grains during secondary recrystallization. To address this issue undeformed and lightly deformed samples were subjected to recrystallization annealing under identical conditions. Although the extent of the deformation is light, such that it creates only limited modifications in the grain boundary structures, the recrystallization mechanism changes from abnormal secondary growth to conventional grain growth. In the former case, recrystallization commences at higher temperatures when the MnS inhibiting particles become dissolved, and in the latter mechanism, recrystallization occurs at lower temperatures due to the differences in stored energy between grains sharing a common boundary. This occurs through strain-induced grain boundary migration.

show abstract

New grain-oriented silicon steel with high permeability "ORIENTCORE HI-B"

Cited by 83 publications

References 6 publications

Onset of Secondary Recrystallization in High Purity 3.3%Si Steel

Onset of Secondary Recrystallization in High Purity 3.3%Si Steel

Texture control in the production of grain oriented silicon steels.

Grain Boundary Deformation Phenomena and Secondary Growth of Goss Grains in a Fe-3.5%Si Steel

Contact Info

Product

Resources

About