Superlattices and Microstructures volume 40, issue 4-6, P412-417 2006 DOI: 10.1016/j.spmi.2006.09.016 View full text
L. Nevou, M. Tchernycheva, L. Doyennette, F.H. Julien, E. Warde, R. Colombelli, F. Guillot, S. Leconte, E. Monroy, T. Remmele, M. Albrecht

Abstract: We present a systematic investigation of ultrathin single and coupled GaN/AlN quantum wells grown by molecular beam epitaxy for applications to unipolar devices. Narrow Lorentzian-shaped intersubband absorptions are demonstrated tunable at telecommunication wavelengths. The linewidth is as small as 40 meV which sets a new state-of-the-art. Simulation of the intersubband wavelength and comparison with measurements leads us to revise the value of the conduction band offset at the GaN/AlN interface (1.7 ± 0.05 e…

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