New Cu(TiBNx) copper alloy films for industrial applications

Lin, Cherng‐Yuan

doi:10.7567/jjap.55.06jd02

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…a barrier metallization process, we can® if the immiscible materials are properly chosen with a correct, or good, composition combination® create a new type of Cu alloy films, e.g. Cu(TiBN x ) 5) and Cu(AuTiN x ), 6) which shall be able to fulfill the same barrier-layer-inserted objectives without the barrier layer and thus solving the mentioned problems associated with the inserted barrier layer. The new films created thus must imperatively retain high stability in existence under various high-temperature manufacturing environments where the films are to be processed and/or utilized.…”

Section: Introductionmentioning

confidence: 99%

“…12) The barrierless metallization described herein not only simplifies manufacturing processes for electronic components and devices to reduce their manufacture cost but also renders a new methodology for creating new types of Cu alloy films, e.g. Cu(TiBN x ) 5) and Cu(AuTiN x ), 6) that exhibit unique micro-composition and good high-temperature quality, such as stability in existence under high temperatures. The methodology described herein shall be a refreshing contribution to the advancement of electronic manufacturing technology; besides, it can shed a light on material science.…”

Section: Introductionmentioning

confidence: 99%

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Newly-Developed Cu(NbZrNx) Copper-Alloy Films for Microelectronic Manufacture Advancement

Lin

2022

Mater. Trans.

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Copper (Cu) alloy thin films deposited on barrierless substrates via sputtering and annealing processes have been essential for numerous microelectronic products and continue to be so in the new nanometer-range manufacture era. The search for better new films thus is crucial for further technical and manufacture advancement. The requirements on the new films lie in their stability in existence under high-temperature manufacture environments, low electric resistivity, less leakage current under various electric fields, and sufficient adhesion strength. For the search and advancement, I have developed a new type of films by co-sputtering impurities of niobium, Nb, and zirconium, Zr, with Cu within a vacuum chamber without any gas or with nitrogen (N) under low pressure, resulting in new Cu(NbZr) or Cu(NbZrN x ) films whose fabrication processes and test results are detailed herein. The new type of films displays good physical features and seems desirable for microelectronic manufacture and to material science, too.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Newly-Developed Cu(NbZrNx) Copper-Alloy Films for Microelectronic Manufacture Advancement

Lin

2022

Mater. Trans.

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Some aspects of new Cu(NbC) films

Lin

2019

Bull Mater Sci

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A newly developed Cu(Rh) alloy film and its characteristics and applications

Lin

2024

AAPPS Bull.

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A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere. The new films are next annealed at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 μΩ cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 μΩ after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is then thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11 ~ 12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against Staphylococcus aureus (S. aureus) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8 nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like. Graphical Abstract A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere and then annealing the new films at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 mW cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 mW after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is next thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11~12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against Staphylococcus aureus (S. aureus) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8-nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like.

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New Cu(TiBN_x) copper alloy films for industrial applications

Cited by 4 publications

References 32 publications

Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Some aspects of new Cu(NbC) films

A newly developed Cu(Rh) alloy film and its characteristics and applications

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