New approach to fabricate low-loss Titanium dioxide waveguides with electron beam lithography and atomic layer deposition

Häyrinen, Markus; Roussey, Matthieu; Gandhi, Vishal; Kuittinen, Markku; Honkanen, Seppo

doi:10.1364/iprsn.2013.it2a.5

Cited by 1 publication

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“…In silicon photonics the high refractive-indexcontrast of silicon wire waveguides leads to strong scattering at the sidewalls and consequently high loss. Use of conformal ALD layers to reduce surface roughness and consequently reduce loss in the infrared wavelength regime (λ = 1550 nm) for silicon and titania (TiO 2 ) wire waveguides has been demonstrated [14,15]. Si 3 N 4 strip waveguides possesses much lower material index contrast but nevertheless, at shorter wavelengths (visible-VNIR), sidewall roughness remains the major source of the waveguide loss because of the Rayleigh scattering, which is inversely proportional to the fourth power of the wavelength.…”

Section: Introductionmentioning

confidence: 99%

Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths

et al. 2014

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A CMOS compatible post-processing method to reduce optical losses in silicon nitride (Si(3)N(4)) integrated optical waveguides is demonstrated. Using thin layer atomic layer deposition (ALD) of aluminum oxide (Al(2)O(3)) we demonstrate that surface roughness can be reduced. A 40 nm thick Al(2)O(3) layer is deposited by ALD over Si(3)N(4) based strip waveguides and its influence on the surface roughness and the waveguide loss is studied. As a result, an improvement in the waveguide loss, from very high loss (60 dB/cm) to low-loss regime (~5 dB/cm) is reported for a 220 nm x 500 nm Si(3)N(4) wire at 900 nm wavelength. This opens prospects to implement very low loss waveguides.

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Section: Introductionmentioning

confidence: 99%