Nernst Limit in Dual-Gated Si-Nanowire FET Sensors

Knopfmacher, Oren; Tarasov, Alexey; Fu, Wangyang; Wipf, Mathias; Niesen, Bjoern; Calame, Michel; Schönenberger, Christian

doi:10.1021/nl100892y

Cited by 321 publications

(282 citation statements)

References 31 publications

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“…It can be seen that the voltage shift has a linear relation with pH values between 3 and 9, and the per pH voltage shift can be extracted from the plot to be 46.5 mV/pH. This voltage shift closely follows the literature values for an Al 2 O 3 surface on nanowire sensors [13,14]. Fig.…”

Section: IIIsupporting

confidence: 81%

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Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

Zeimpekis

Ditshego

et al. 2016

Microelectronic Engineering

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Abstract-In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top-and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200°C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.

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Section: IIIsupporting

confidence: 81%

“…Top-gate sensing sensitivity was measured to be 46.5 mV/pH whereas bottom-gate sensing provided a sensitivity of 366 mV/pH. The results are comparable with those of reported CMOS nanowire sensors [13].…”

Section: Introductionsupporting

confidence: 85%

Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

Zeimpekis

Ditshego

et al. 2016

Microelectronic Engineering

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“…In an extreme case, this compensation will be complete if the sensor surface has a Nernstian pH response [238] (indicating very high density of unpassivated -OH groups). Consequently, there will be no sensing response because any changes in the surface charge +ΔQ 0 due to positively charged target biomolecules attached to surface immobilized receptors are totally screened by the protonation/deprotonation reactions.…”

Section: Graphene As a Chemically Inert Surface: Towards An Ultimatementioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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Abstract. 10Recent research trends now offer new opportunities for developing the next generations of label-free biochemical sensors using graphene and other two-dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene -at least ideal graphene -is highly chemically inert. The 15 functionalizations and chemical alterations of the graphene surface -both covalently and non-covalently -are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field-effect transistor and the challenges that lie ahead. We are convinced that graphene biochemical sensors 20 hold great promises to meet the ever-increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.2

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“…An inner oxide (native oxide) would provide a stable contact with the electrical domain whereas the outer dielectric provides a stable contact with the liquid. SiO2 is not the best pH selective material, and does not provide stable contact between the liquid and the sensor [11] since protons can penetrate the Si-oxide layers leading possibly to large leakage currents [3]. For that reason, HfO2 (10 nm) was deposited as a gate dielectric.…”

Section: Liquid Gated Experimentsmentioning

confidence: 99%

“…Silicon nanowire field effect transistors (SiNW FETs) have provided a versatile platform for the ultra-sensitive and selective detection (through surface modification) of simple molecules [1,2], ions [1,3], and biological entities such as viruses [2], proteins [1], and DNA [4], ever since Cui et al, [1] produced the first SiNW pH sensor based on the pioneering work of Bergveld [5,6]. The interest in nanostructures for sensing stems from their ultra-small dimensions that give rise to large surface to volume ratios (S/V).…”

mentioning

confidence: 99%