Negative differential resistance in nanoscale heterostructures based on zigzag graphene nanoribbons anti-symmetrically decorated with BN

Esmaeili, Maryam; Jafari, Mohammad Reza; Sanaeepur, Majid

doi:10.1016/j.spmi.2020.106584

Cited by 10 publications

(6 citation statements)

References 30 publications

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“…Minima were observed around -1.1 V, -1.7 V, 0.9 V, 1.3 V, 1.9 V. The registration of negative differential resistance at both signs of the applied voltage indicates a symmetrical structure of the FeSe molecule [34]. The value of V ∆ varied from 0.2 V to 0.7 V. The nature of the resulting maxima on the differential conductivity spectrum is related to the Coulomb interaction of particles.…”

Section: Resultsmentioning

confidence: 89%

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Computer Simulation of the Electric Transport Properties of the FeSe Monolayer

Sergeyev

Zhanturina

Myasnikova

et al. 2020

Latvian Journal of Physics and Technical Sciences

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The paper deals with the model research of electric transport characteristics of stressed and non-stressed FeSe monolayers. Transmission spectra, current-voltage characteristic (CVC) and differential conductivity spectra of two-dimensional FeSe nanostructure have been calculated within the framework of the density functional theory and non-equilibrium Green’s functions (DFT + NEGF). It has been shown that the electrophysical properties depend on the geometry of the sample, the substrate, and the lattice constant. On CVC of non-stressed sample in the range from −1.2 V to −1 and from 1.2 V to 1.4 V, a region of negative differential resistance (NDR) has been observed. NDR is at both signs of the applied voltage due to the symmetry of the nanostructure. d2I/dV2 is used to determine the nature of the electron-phonon interaction and the features of quasiparticle tunnelling in stressed and non-stressed samples. The results obtained can be useful for calculating new elements of 2D nanoelectronics.

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Section: Resultsmentioning

confidence: 89%

“…1a). Increase in the number of peaks gives information about increasing indication in the transport of quasiparticles through the structure under consideration [34]. At bias voltages from 0.4 V and higher (Fig.…”

Section: Resultsmentioning

confidence: 99%

Computer Simulation of the Electric Transport Properties of the FeSe Monolayer

Sergeyev

Zhanturina

Myasnikova

et al. 2020

Latvian Journal of Physics and Technical Sciences

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“…Zigzag-edged graphene nanoribbons (ZGNRs) are particularly promising due to the presence of electric field effect tuning of the spin-polarized edge states [ 20 , 21 ]. The ZGNRs can be further designed into nanodevices with unusual transport behaviors, such as thermal regulation [ 22 ], spin filtering [ 7 ], spin diode [ 21 ] and NDR [ 23 ] effects, using a plethora of strategies, including edge modifications [ 24 , 25 ], doping [ 26 , 27 ] and a applying magnetic field [ 28 ]. ZGNRs thus represent a versatile designer platform to explore the design of high-performance spintronics devices with novel functionalities.…”

Section: Introductionmentioning

confidence: 99%

“…The electronic band structures and the spin filtering effect of ZGNRs have previously been investigated [ 23 , 33 ]. In a pristine STGNR-based device, the spin-polarized current transport can be realized with antiparallel (AP) spin ordering of the two electrodes, while in the parallel (P) configuration, the electron tunneling channels for both

- and

-spin states are almost blocked off completely [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices

2021

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We study the quantum transport properties of graphene nanoribbons (GNRs) with a different edge doping strategy using density functional theory combined with nonequilibrium Green’s function transport simulations. We show that boron and nitrogen edge doping on the electrodes region can substantially modify the electronic band structures and transport properties of the system. Remarkably, such an edge engineering strategy effectively transforms GNR into a molecular spintronic nanodevice with multiple exceptional transport properties, namely: (i) a dual spin filtering effect (SFE) with 100% filtering efficiency; (ii) a spin rectifier with a large rectification ratio (RR) of 1.9 ×106; and (iii) negative differential resistance with a peak-to-valley ratio (PVR) of 7.1 ×105. Our findings reveal a route towards the development of high-performance graphene spintronics technology using an electrodes edge engineering strategy.

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“…[ 1,4 ] In this regard, several reports demonstrated how the Fermi velocity alters graphene transport features [ 11–14 ] and its device performance. [ 15,16 ] Among graphene morphologies, quantum wells (QWs), [ 17,18 ] hetrostructures, [ 19–22 ] and superlattices (SLs) [ 23–26 ] have widely been implemented in designing/fabrication emerging devices [ 27–29 ] and exploring novel phenomenon [ 30–35 ] beyond the reach of exciting materials. In this context, resonant tunneling as one of the unique transport processes in SLs exhibited great promise to enrich the potential of SLs and QW devices including tunnel transistors (TFETs) [ 36–38 ] and resonant tunneling diodes (RTDs).…”

Section: Introductionmentioning

confidence: 99%

Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

2021

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Negative differential resistance (NDR) devices are adequate candidates for the functional devices applicable to the next‐generation integrated circuit technology so‐called “Beyond CMOS.” Here, a graphene velocity‐modulation‐barrier resonant‐tunneling diode operating at room temperature is proposed. The current–voltage characteristics of the device are analyzed using the non‐equilibrium Green's function technique. It is found that the Fermi velocity barrier in the well/barrier region manipulates the tunneling transmission probability by suppressing the Klein region and improving the resonant tunneling leading to NDR. For special values of velocity barriers, resonant states have maximum alignment with each other which increases peak current with a high peak to valley ratio (PVR). The width and the position of the NDR window are controlled and engineered by the device dimensions and the height of potential barriers. The smaller the device showed the better the NDR properties such as larger current density and maximum PVR. Taken together, the results reveal that adequate magnitude of the Fermi velocity in graphene barrier can be an impressive concept for the fabrication of emerging tunneling devices.

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Negative differential resistance in nanoscale heterostructures based on zigzag graphene nanoribbons anti-symmetrically decorated with BN

Cited by 10 publications

References 30 publications

Computer Simulation of the Electric Transport Properties of the FeSe Monolayer

Computer Simulation of the Electric Transport Properties of the FeSe Monolayer

Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices

Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

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