Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides

Nicholls, Jordan R.; Vidarsson, Arnar M.; Haasmann, Daniel; Sveinbjörnsson, Einar Ö.; Dimitrijev, Sima

doi:10.1109/ted.2020.3011661

Cited by 18 publications

(22 citation statements)

References 30 publications

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“…In our previous paper, we showed that the peak of the NI signal in conductance-temperature (G-T) spectroscopy measurements is associated with a specific surface electron density, irrespective of the gate bias. 15 Zhai et al found a similar result by using standard interface trap characterization of low temperature conductance-frequency measurements. 16 They observed that the trap time constant was independent of the surface potential.…”

Section: Introductionmentioning

confidence: 64%

“…I. 15,16 This is critical, and the present analysis is only possible because this has now been verified. 15,16 To begin, we must first consider that at a fixed frequency, most of the measured NIT conductance signal will be due to a very narrow range of traps (in both energy and lateral depth).…”

Section: Characterization Methodsmentioning

confidence: 82%

“…15,16 This is critical, and the present analysis is only possible because this has now been verified. 15,16 To begin, we must first consider that at a fixed frequency, most of the measured NIT conductance signal will be due to a very narrow range of traps (in both energy and lateral depth). Therefore, we will assume that the conductance can be reasonably approximated as that of an average trap, with an effective areal density N T and a single electron capture and release rate (R C and R R ), as opposed to rate distributions.…”

Section: Characterization Methodsmentioning

confidence: 85%

“…One approach to this issue is to implement numerical simulations of NIT conductance and then extract the properties by fitting to the measured data. 15 This approach works but it is far too computationally expensive to see the practical use for comparing oxidation processes, especially at scale.…”

Section: Introductionmentioning

confidence: 99%

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A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Nicholls

Vidarsson

Haasmann

et al. 2021

Journal of Applied Physics

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The state-of-the-art technology for gate oxides on SiC involves the introduction of nitrogen to reduce the density of interface defects. However, SiC metal-oxide-semiconductor (MOS) field-effect transistors still suffer from low channel mobility even after the nitridation treatment. Recent reports have indicated that this is due to near-interface traps (NITs) that communicate with electrons in the SiC conduction band via tunneling. In light of this evidence, it is clear that conventional interface trap analysis is not appropriate for these defects. To address this shortcoming, we introduce a new characterization method based on conductance-temperature spectroscopy. We present simple equations to facilitate the comparison of different fabrication methods based on the density and location of NITs and give some information about their origin. These techniques can also be applied to NITs in other MOS structures.

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Section: Introductionmentioning

confidence: 64%

Section: Characterization Methodsmentioning

confidence: 82%

Section: Characterization Methodsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Nicholls

Vidarsson

Haasmann

et al. 2021

Journal of Applied Physics

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“…A commonly used approach for extracting interface/surface trap parameters is based on capacitance 14 , 16 or conductance 17 measurements on capacitors, to extract the interface state density (D it ). However, this requires specific test structures, whose properties and processing parameters may deviate from those of final devices.…”

Section: Introductionmentioning

confidence: 99%

Trap-state mapping to model GaN transistors dynamic performance

Modolo

Santi

Minetto

et al. 2022

Sci Rep

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Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identification of the related traps is challenging, especially in presence of non-ideal defects. In this paper, we propose a novel methodology (trap-state mapping) to extract trap parameters, based on the mathematical study of stretched exponential recovery kinetics. To demonstrate the effectiveness of the approach, we use it to identify the properties of traps in AlGaN/GaN transistors, submitted to hot-electron stress. After describing the mathematical framework, we demonstrate that the proposed methodology can univocally describe the properties of the distribution of trap states. In addition, to prove the validity and the usefulness of the model, the trap properties extracted mathematically are used as input for TCAD simulations. The results obtained by TCAD closely match the experimental transient curves, thus confirming the accuracy of the trap-state mapping procedure. This methodology can be adopted also on other technologies, thus constituting a universal approach for the analysis of multiexponential trapping kinetics.

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The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

Mutale¹,

Zulu²,

Yılmaz³

2023

J Mater Sci: Mater Electron

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Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides

Cited by 18 publications

References 30 publications

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Trap-state mapping to model GaN transistors dynamic performance

The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

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