Near-infrared photoluminescence of V-doped GaN

Touati, H.; Souissi, M.; Chine, Z.; Jani, B. El

doi:10.1016/j.mejo.2008.04.008

Cited by 8 publications

(5 citation statements)

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“…Since XRD result does not shown any phase separation, it is possible that the observed ferromagnetism originates from an alloy of GaN and magnetic element (V). The Hall effect measurement of all the samples investigated in this work shows n-type conductivity after doping [25], their ferromagnetic properties cannot be explained by hole-mediated interaction as proposed in some of the theoretical works [26,27]. Alternative explanation proposed in the literature for the origin of ferromagnetism in n-type samples is the s-d exchange interaction [28].…”

Section: Resultsmentioning

confidence: 49%

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Souissi

Schmerber

Derory

et al. 2010

Phys. Status Solidi (c)

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V‐doped GaN thin films were grown on c‐sapphire substrate by metal organic chemical vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl4) to intentionally incorporate vanadium (V) during the crystal growth of GaN. X‐ray diffraction measurements revealed no secondary phase in the samples.Magnetic experiments using superconducting quantum interference device (SQUID) showed clear hysteresis loop in magnetization versus applied field (M –H) curves for V‐doped GaN films. The ferromagnetic behavior was evidenced at 300 K, implying the Curie temperature to be over 300 K. Strong and broad blue‐luminescent band (centered at 2.6 eV) is induced by the V doping in GaN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 49%

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Souissi

Schmerber

Derory

et al. 2010

Phys. Status Solidi (c)

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“…Figure 1 shows the PL spectra obtained at 10 K of vanadium doped GaN. By comparing the spectra obtained from the vanadium doped and undoped crystals [13], we have checked that the undoped GaN sample does not exhibit emissions labeled A, B, C, D and E. This demonstrates that these emissions are related to vanadium. The comparison with other investigations of 3d 3 transitions metals doped III-V semiconductors to leads to obtain information about the charge state and the ground state of vanadium in GaN.…”

Section: Methodsmentioning

confidence: 94%

“…Trimethylgallium (TMG), ammoniac (NH 3 ), silane (SiH 4 ) and vanadium tetrachloride (VCl 4 ) were used as the precursors of gallium, nitrogen, silicon and vanadium, respectively. The growth was in-situ monitored by He-Ne laser reflectometry (632.8 nm) [13,14].…”

Section: Methodsmentioning

confidence: 99%

Optical and theoretical investigations of V²⁺ ion in GaN

Souissi

Dammak

et al. 2011

Phys. Status Solidi C

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The infrared luminescence of vanadium‐doped gallium nitride (GaN:V) grown by metalorganic vapour phase epitaxy technique (MOVPE) on SiN‐treated sapphire substrate were examined. Two spin allowed transitions were observed at 6633 cm‐1 and 6959 cm‐1, and are respectively assigned to the 4T1(4P)→4T1(4F) and 4A2(4F) → 4T1(4F) transition of V2+ (3d3) in a tetrahedral symmetry with a 4T1 ground state. Crystal‐field calculation of the detected transition energies based on the Tanabe‐Sugano scheme is presented. Good agreements between theoretical and experimental energy levels are obtained. The presence of a series of vibronic state is also discussed in this work (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…These valence electrons couple ferromagnetically and as a result the two electrons produce a total magnetic moment of 2 μ β /atom-V. Touati et al, (2008)[41] reported a valence of V 3+ for infrared luminescence in V-doped GaN samples grown with MOVPE on a sapphire substrate. Finally, the magnetic moment of Al 0.9375 V 0.0625 N and Al 0.875 V 0.125 N compounds are integers, therefore, this confirms that each compound is ferromagnetic and half-metallic.…”

Section: Electronic and Magnetic Propertiesmentioning

confidence: 99%

Theoretical calculation of half-metallic ferromagnetism in Al1-xVxN compound

Espitia¹,

DÃaz²,

Castillo³

2016

Int. J. Phys. Sci.

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Using the first-principles in the framework of density functional theory, the structural properties, electronic structure, and magnetism of V-doped aluminum nitride (AlN) were investigated. The calculations were carried out using the method based on pseudopotential, employed exactly as implemented in Quantum ESPRESSO code. For (x = 6.25%) Al 0.9375 V 0.0625 N and (x = 12.5%) Al 0.875 V 0.125 N concentrations, a half-metallic behavior with 100% carrier spin polarization of the conduction carriers in the ground state was found. The calculations showed that the substitution of a V atom at the Al site (Al 0.9375 V 0.0625 N compound) introduces a magnetic moment of 2.0 μ B , while two V atom substitutions (Al 0.875 V 0.125 N compound) introduce a magnetic moment of 4.0 μ B. These magnetic properties came from hybridization and polarization of states V-3d and their first neighboring Al-2p and first neighboring N-2p atoms. The calculated magnetic properties indicate that V-doped AlN compound can potentially be used in diluted magnetic semiconductors or as spin injectors.

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Near-infrared photoluminescence of V-doped GaN

Cited by 8 publications

References 20 publications

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Optical and theoretical investigations of V²⁺ ion in GaN

Theoretical calculation of half-metallic ferromagnetism in Al1-xVxN compound

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Near-infrared photoluminescence of V-doped GaN

Cited by 8 publications

References 20 publications

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Optical and theoretical investigations of V2+ ion in GaN

Theoretical calculation of half-metallic ferromagnetism in Al1-xVxN compound

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Optical and theoretical investigations of V²⁺ ion in GaN