Near-Carrier Phase Noise Suppression at Turnover Temperature in a Thin-Film Piezoelectric-on-Silicon Oscillator

Majd, Yasaman; Shahraini, Sarah; Goodale, Garett; Lavasani, Hossein Miri; Abdolvand, Reza

doi:10.1109/jmems.2020.3004317

Cited by 5 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, AlN on silicon dioxide (SiO 2 ) or lithium niobate (LiNbO 3 ) on SiO 2 LVRs are proposed as a solution for temperature compensation [ 14 , 15 ]. Furthermore, the bottom layer of Thin-Film Piezoelectric-on-Silicon (TPoS) LVRs is typically made of a semiconductor or insulating material with a high intrinsic Q value, such as single-crystal silicon, to improve the Q value of LVRs [ 16 , 17 , 18 ]. However, the bilayer LVRs do not exhibit purely symmetric Lamb modes due to the asymmetry of the materials in the thickness direction and instead operate in the lowest-order quasi-symmetric (QS 0 ) mode [ 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Modal-Transition-Induced Valleys of K2 in Piezoelectric Bilayer Laterally Vibrating Resonators

2023

View full text Add to dashboard Cite

Piezoelectric Laterally Vibrating Resonators (LVRs) have attracted significant attention as a potential technology for next-generation wafer-level multi-band filters. Piezoelectric bilayer structures such as Thin-film Piezoelectric-on-Silicon (TPoS) LVRs which aim to increase the quality factor (Q) or aluminum nitride and silicon dioxide (AlN/SiO2) composite membrane for thermal compensation have been proposed. However, limited studies have investigated the detailed behaviors of the electromechanical coupling factor (K2) of these piezoelectric bilayer LVRs. Herein, AlN/Si bilayer LVRs are selected as an example, we observed notable degenerative valleys in K2 at specific normalized thicknesses using two-dimensional finite element analysis (FEA), which has not been reported in the previous studies of bilayer LVRs. Moreover, the bilayer LVRs should be designed away from the valleys to minimize the reduction in K2. Modal-transition-induced mismatch between electric and strain fields of AlN/Si bilayer LVRs are investigated to interpret the valleys from energy considerations. Furthermore, the impact of various factors, including electrode configurations, AlN/Si thickness ratios, the Number of Interdigitated Electrode (IDT) Fingers (NFs), and IDT Duty Factors (DFs), on the observed valleys and K2 are analyzed. These results can provide guidance for the designs of piezoelectric LVRs with bilayer structure, especially for LVRs with a moderate K2 and low thickness ratio.

show abstract

Section: Introductionmentioning

confidence: 99%

Modal-Transition-Induced Valleys of K2 in Piezoelectric Bilayer Laterally Vibrating Resonators

2023

View full text Add to dashboard Cite

show abstract

“…Hence, the quest to (a) reduce device footprint, (b) minimize power consumption, (c) enable largescale production, (d) deliver monolithically integrated clocks whilst still delivering PN performance at par with quartz oscillators have been driving the microelectromechanical system (MEMS) oscillator research for more than a decade. MEMS oscillators have the following advantages over the traditional crystal oscillator approach [1][2][3][4][5][6][7]: (a) less sensitive to vibration, (b) can drive multiple loads, (c) smaller device footprint, (d) less sensitive to electromagnetic interference, (e) improved reliability and signal quality, and (f) easy scaling of frequency using the semiconductor manufacturing process. The key component of an oscillator system is the frequency selective tank i.e.…”

Section: Introductionmentioning

confidence: 99%

“…the resonator. The PN performance depends on the loss of the resonator, its frequency stability, and the quality factor at the mode of interest [3][4][5][6][7][8][9][10][11]. Hence it is critical to devise engineering strategies to efficiently excite acoustic modes that exhibit high-Q and at the same time pose minimal loss to the signal transmitted between the drive and sense terminals.…”

Section: Introductionmentioning

confidence: 99%

Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator

Kongbrailatpam

Jen²,

Li³

et al. 2022

J. Micromech. Microeng.

View full text Add to dashboard Cite

This work reports the successful excitation of a novel bulk acoustic mode whose actuation and sensing are facilitated by the support transducer topology (STT). The design methodology concurrently supports low motional impedance and high energy confinement features which are crucial for frequency reference components in Radio Frequency communication. A conventional bulk mode operating in the Width Extension (WE) mode is deployed to efficiently excite the higher-order radial mode using the STT design feature of resonant frequency matching. The thin-film piezoelectric on substrate (TPoS) support transducers excited in a WE mode is mechanically coupled to the bulk silicon allowing the acoustic energy of the MEMS resonator to be stored maximally in the high-quality factor (Q) resonant tank, thereby alleviating the overall losses due to low-Q of the piezoelectric thin film and electrode material. The resonator exhibits a Q of 19,728 at 63.56 MHz resonant frequency with a motional resistance (Rm) of 368 Ω when measured in vacuum at a power level of 0 dBm. Under cryogenic measurement conditions, the device recorded a Q of 24,153 at 15 K. A standalone WE resonator is studied to put a spotlight on the quality factor enhancement technique using the STT. The STT enabled novel bulk mode enhances the overall Q by 320% and halves the Rm. When implemented as an oscillator, its performance exceeds the Global System for Mobile (GSM) communication standards phase noise requirements. Phase noise (PN) of -136.95 dBc/Hz and -161.52 dBc/Hz at 1 kHz and 1 MHz offset, respectively, were recorded when normalized to a carrier frequency of 13 MHz.

show abstract

A Two-Square Shaped Phononic Crystal Strip for Anchor Quality Factor Enhancement in a Length Extensional Mode TPoS Resonator

2022

J. Vib. Eng. Technol.

View full text Add to dashboard Cite

Near-Carrier Phase Noise Suppression at Turnover Temperature in a Thin-Film Piezoelectric-on-Silicon Oscillator

Cited by 5 publications

References 15 publications

Modal-Transition-Induced Valleys of K2 in Piezoelectric Bilayer Laterally Vibrating Resonators

Modal-Transition-Induced Valleys of K2 in Piezoelectric Bilayer Laterally Vibrating Resonators

Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator

A Two-Square Shaped Phononic Crystal Strip for Anchor Quality Factor Enhancement in a Length Extensional Mode TPoS Resonator

Contact Info

Product

Resources

About