NbTiN thin films deposited by hybrid HiPIMS/DC magnetron co-sputtering

Giudice, Lorenzo Del; Adjam, S.; Grange, David; Banakh, O.; Karimi, A.; Sanjinés, R.

doi:10.1016/j.surfcoat.2015.10.007

Cited by 20 publications

(17 citation statements)

References 49 publications

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“…Varying the ratio of cations with different numbers of valence electrons allows for the plasma frequency to be tuned, as has previously been reported. 20,26 The ternary films display unscreened plasma frequencies corresponding to wavelengths ranging from 413 to 420 nm for all substrates, falling between the average epsilon-near-zero values for NbN and TiN of 330 and 473 nm, respectively. When considering the optical properties of the binary and ternary thin films, slight substrate-dependent variation between films is observed, particularly at longer wavelengths.…”

Section: ■ Results and Discussionmentioning

confidence: 97%

“…Del Giudice et al have previously deposited micrometer-thick TiNbN films using a hybrid HIPIMS and DC magnetron sputtering method at room temperature. 20 Ehiasarian et al reported full morphological densification of TiN thin films 21 due to high surface mobility and reactivity of the adatom flux and the promotion of (002) crystallographic texture, which favors the incorporation of impurities such as oxygen as substitutions or interstitials into the growing crystal lattice of the films and reduces its segregation at grain boundaries.…”

Section: ■ Introductionmentioning

confidence: 99%

“…HIPIMS utilizes high instantaneous powers to produce plasma density on the order of 10 13 cm –3 at the substrate, which activates the deposition process by increasing the ionization degree of the sputtered flux and the dissociation rate of the reactive gas ions. Del Giudice et al have previously deposited micrometer-thick TiNbN films using a hybrid HIPIMS and DC magnetron sputtering method at room temperature . Ehiasarian et al reported full morphological densification of TiN thin films due to high surface mobility and reactivity of the adatom flux and the promotion of (002) crystallographic texture, which favors the incorporation of impurities such as oxygen as substitutions or interstitials into the growing crystal lattice of the films and reduces its segregation at grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Complementary Metal–Oxide–Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications

Bower

Loch

Ware

et al. 2020

ACS Appl. Mater. Interfaces

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Transition-metal nitrides have received significant interest for use within plasmonic and optoelectronic devices because of their tunability and environmental stability. However, the deposition temperature remains a significant barrier to widespread adoption through the integration of transition-metal nitrides as plasmonic materials within complementary metal− oxide−semiconductor (CMOS) fabrication processes. Binary, ternary, and layered plasmonic transition-metal nitride thin films based on titanium and niobium nitride are deposited using highpower impulse magnetron sputtering (HIPIMS) technology. The increased plasma densities achieved in the HIPIMS process allow thin films with high plasmonic quality to be deposited at CMOScompatible temperatures of less than 300 °C. Thin films are deposited on a range of industrially relevant substrates and displaytunable plasma frequencies in the ultraviolet to visible spectral ranges. Strain-mediated tunability is discovered in layered films compared to that in ternary films. The thin film quality, combined with the scalability of the deposition process, indicates that HIPIMS deposition of nitride films is an industrially viable technique and can pave the way toward the fabrication of next-generation plasmonic and optoelectronic devices.

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Section: ■ Results and Discussionmentioning

confidence: 97%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Complementary Metal–Oxide–Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications

Bower

Loch

Ware

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Glow discharge sputtering technologies are used in different applications such as, in industrial and medicine for deposition thin film and surface treatment [1][2][3][4][5][6][7]. There are different processes in physical vapor deposition (PVD) techniques such as, laser ablation, evaporation and sputtering used for coating sample [1,8,9].…”

Section: Introductionmentioning

confidence: 99%

Effect of electrode separation in magnetron DC plasma sputtering on grain size of gold coated samples

Yahya¹

2018

IJP

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In this work, an experimental research on a low voltage DC magnetron plasma sputtering (0-650) volt is used for coating gold on a glass substrate at a constant pressure of argon gas 0.2 mbar and deposition time of 30 seconds. We focused on the effects of operating conditions for the system such as, electrode separation and sputtering current on coated samples under the influence of magnetic flux. Electron temperature and electrons and ions densities are determined by a cylindrical single Langmuir probe. The results show the sensitivity of electrode separation lead to change the plasma parameters. Furthermore, the surface morphology of gold coated samples at different electrode separation and sputtering current were studied by atomic force microscopy (AFM). The AFM analysis showed that the variation of average grain diameter and average grain height is nonlinear with a minimum value of average grain diameter 90 nm at electrode separation of 4 cm and 30 mA sputtering current.

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“…As a newly developed physical vapor deposition (PVD) sputtering technique, the HiPIMS has many merits to obtain coatings such as good adhesion with substrates, dense structure and optimized tribological properties, even when using low deposition temperature and low bias voltage compare to conventional sputtering and arc ion plating deposition [16,17]. In the works by Giudice et al and Paulitsch et al [18,19], the obtained coatings (Nb/TiN and Cr/TiN) deposited by HiPIMS had higher hardness, more uniform and denser structure coatings than DC magnetron sputtering. Ehiasarian et al [20] reported that CrN and CrN/NbN coatings fabricated by HiPIMS possessed excellent mechanical and tribological properties in contrast to conventional sputtering.…”

Section: Introductionmentioning

confidence: 99%

Effects of Negative Bias Voltage and Ratio of Nitrogen and Argon on the Structure and Properties of NbN Coatings Deposited by HiPIMS Deposition System

et al. 2017

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The NbN x>1 coatings were deposited on Si wafer and SUS 304 stainless steel substrates by a high power impulse magnetron sputtering (HiPIMS) system at various bias voltages and the ratios of nitrogen and argon (N 2 /Ar). By virtue of electron probe microanalysis (EPMA), X-ray diffraction pattern (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and nano indentation test, the relationships between deposition parameters and coatings properties were examined in detail. These coatings show a strong preferred orientation of (200) plane at free bias voltage. With increasing bias voltage, the intensity of (200) plane peak became weaker and the full width at half maximum of peaks ((200) and (111) peaks) became broader, implying the crystalline grain size were decreased. The (200) plane almost is disappeared at −150 V bias voltage and the phase transition maintains the same change tendency with the increase of N 2 /Ar gas ratio. The coating microstructure gradually evolved from coarse columnar to dense columnar, and then to compact featureless structure with increase of the bias voltage, corresponding to the decreased surface roughness. The columnar structure of coatings is unrelated to N 2 /Ar gas ratio and the thickness is minimum at high N 2 /Ar ratio, which is attributed to the poor sputtering capability of nitrogen compared with argon instead of target poisonous effect. The higher hardness (H) and elastic recovery value are obtained for NbN x>1 (H = 31.3 GPa and W e = 69.2%) at −150 V bias voltage, suggesting considerable influence of bias voltage on hardness than that of the N 2 /Ar gas ratio.

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NbTiN thin films deposited by hybrid HiPIMS/DC magnetron co-sputtering

Cited by 20 publications

References 49 publications

Complementary Metal–Oxide–Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications

Complementary Metal–Oxide–Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications

Effect of electrode separation in magnetron DC plasma sputtering on grain size of gold coated samples

Effects of Negative Bias Voltage and Ratio of Nitrogen and Argon on the Structure and Properties of NbN Coatings Deposited by HiPIMS Deposition System

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