Nature and spatial localization of electroluminescence sources in the metal-composite layer-semiconductor structures

Abstract

Variations in the electroluminescence spectra and intensity of the metal-composite layer-semi conductor (Au-SiO x N y (Si)-cSi) structures as functions of the characteristics of the luminescent active tran sition region at the interface of the cSi substrate and the SiO x N y (Si) composite layer are studied. New infor mation on localization of the electroluminescence sources in the transition region is obtained. It is found that the transition region contains various luminescence active silicon inclusions, which contribute to both the short wavelength (λ ≈ 500-1000 nm) and long wavelength (λ ≈ 1000-1600 nm) branches of electrolumines cence. The effect of technological factors on the electroluminescence spectra, intensity, and quantum effi ciency is analyzed.