2004
DOI: 10.1116/1.1771680
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Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces

Abstract: We investigated the effect of nanoscale fluctuations in the distribution of dopant atoms on the roughness of electronic interfaces of p -n junctions and on the formation of electronically separated dopant-induced dots. It is shown that the screening fields around each charged dopant atom and a clustering of dopant atoms induce two separate roughness components, which are much larger than the roughness of the underlying metallurgical interface. This leads to charge carrier depleted zones extending locally throu… Show more

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Cited by 9 publications
(4 citation statements)
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References 22 publications
(19 reference statements)
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“…Dopants play a critical role in semiconductor devices and are therefore a major focus of research. For instance, several doping strategies have emerged and led to significant improvements to drive impurities (dopant) inside pure substrates and to reduce the variability of targeted electronic devices, together with increased performances for nano-objects. However, improving dopant incorporation, avoiding randomness of concentration, and investigating diffusion phenomena still represent an outstanding challenge today, in particular with the development of smaller nanosized devices . Indeed, increasing the performance in microelectronics has been directly related to the continuing shrinking of transistors and thus to their optimized properties.…”
Section: Introductionmentioning
confidence: 99%
“…Dopants play a critical role in semiconductor devices and are therefore a major focus of research. For instance, several doping strategies have emerged and led to significant improvements to drive impurities (dopant) inside pure substrates and to reduce the variability of targeted electronic devices, together with increased performances for nano-objects. However, improving dopant incorporation, avoiding randomness of concentration, and investigating diffusion phenomena still represent an outstanding challenge today, in particular with the development of smaller nanosized devices . Indeed, increasing the performance in microelectronics has been directly related to the continuing shrinking of transistors and thus to their optimized properties.…”
Section: Introductionmentioning
confidence: 99%
“…1,2) There has been substantial interest in the study of RDDs and the relevant device variability issues. [2][3][4][5][6][7][8][9][10][11][12][13] The tendency to adopt an undoped channel in MOSFETs becomes preferable due to the significant advantage of suppressing the impact of the RDD as a source of intrinsic process variability. 14) To achieve an intrinsic channel, the gate electrostatic control of the channel must be enhanced in the absence of dopants to cope with the short-channel effect (SCE).…”
Section: Introductionmentioning
confidence: 99%
“…For device simulations, the discrete nature of the dopants’ positions is therefore commonly ignored altogether, and a homogeneous, continuous distribution of charge is assumed . Naturally, this approximation fails if the number of dopants in the device is small. In this case, the fluctuations in both the number and the position of the dopants are large and may dominate the electronic properties of the device. These random dopant fluctuations (RDFs) have been pointed out decades ago and are now recognized to represent a fundamental obstacle for the further scale-down of the complementary metal–oxide–semiconductor (CMOS) process. …”
mentioning
confidence: 99%