Nanolithography and manipulation of graphene using an atomic force microscope

Giesbers, A. J. M.; Zeitler, U.; Neubeck, S.; Freitag, F.; Новоселов, К. С.; Maan, J.C.

doi:10.1016/j.ssc.2008.06.027

Cited by 139 publications

(116 citation statements)

References 36 publications

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“…However, * Electronic address: msatoru@iis.u-tokyo.ac.jp † Electronic address: tmachida@iis.u-tokyo.ac.jp the contact-mode AFM cantilever can damage the fabricated device [20]. Further, the transport phenomena of Dirac fermions were not demonstrated clearly in either experiment above [18,19]. In this letter, we describe LAO lithography experiments that were conducted in single-layer, bilayer, and multilayer graphene using tapping-mode AFM.…”

Section: Pacs Numbersmentioning

confidence: 99%

“…However, in their experiment, the number of graphene layers was not determined, though the LAO conditions such as the width of oxidized area are expected to be totally different for single-layer, bilayer, and multilayer graphene. Geisbers et al used contact-mode AFM to produce an insulating trench on single-layer graphene [19]. However, * Electronic address: msatoru@iis.u-tokyo.ac.jp † Electronic address: tmachida@iis.u-tokyo.ac.jp the contact-mode AFM cantilever can damage the fabricated device [20].…”

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confidence: 99%

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Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Masubuchi

Ono

Yoshida

et al. 2009

Applied Physics Letters

156

112

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We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices. PACS numbers:Graphene, a single atomic layer of graphite, has a unique band structure [1,2] and exceptionally high carrier mobility [3]. Therefore, it has been used to develop carbon-based electronic devices [4]. To date, graphene nanodevices such as quantum dots [5,6], AharonovBohm rings [7], and nanoribbons [8,9] have been fabricated by conventional electron-beam lithography combined with plasma etching. However, plasma etching introduces defects in graphene [3,7,10], which causes localization of charge carriers [7,10]. Further, this technique cannot be used to control the edge structure of graphene, which is expected to have significant effects on its electronic properties [8]. Therefore, in order to fabricate high-quality devices, we need a new lithography technique that will allow us to perform high-resolution patterning without damaging the graphene layer.Local anodic oxidation (LAO) lithography using atomic force microscope (AFM) is a promising technique for the fabrication of graphene nanodevices. This is because LAO lithography has been successfully used for fabricating nanodevices based on semiconductors [11,12,13,14,15]. The confinement of charge carriers obtained by LAO is highly specular [16] than that obtained by plasma etching [17], i.e. the charge carriers conserve their momentum along the normal to the confinement. Recently, Weng et al. produced insulating trenches in graphene flakes with a thickness of 1-2 atomic layers using tapping-mode AFM [18]. However, in their experiment, the number of graphene layers was not determined, though the LAO conditions such as the width of oxidized area are expected to be totally different for single-layer, bilayer, and multilayer graphene. Geisbers et al. used contact-mode AFM to produce an insulating trench on single-layer graphene [19]. However, * Electronic address: msatoru@iis.u-tokyo.ac.jp † Electronic address: tmachida@iis.u-tokyo.ac.jp the contact-mode AFM cantilever can damage the fabricated device [20]. Further, the transport phenomena of Dirac fermions were not demonstrated clearly in either experiment above [18,19]. In this letter, we describe LAO lithography experiments that were conducted in single-layer, bilayer, and multilayer graphene using tapping-mode AFM. We show that the width of oxidized area depends on the number of graphene layers. We hav...

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Section: Pacs Numbersmentioning

confidence: 99%

mentioning

confidence: 99%

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Masubuchi

Ono

Yoshida

et al. 2009

Applied Physics Letters

156

112

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“…The tailoring methods of the graphene sheets are named lithographic methods. The simplest lithographic method applies an STM needle to move or brake the graphene sheet [11]. In the other methods a voltage is applied between the AFM needle and the graphene sheet.…”

Section: Introductionmentioning

confidence: 99%

Self-organizing Behavior of Y-junctions of Graphene Nanoribbons

Fülep¹,

Zsoldos²,

László³

2017

IJERA

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With the help of our molecular dynamics simulation we want to motivate emerging and development of technological methods for building of carbon nanostructure networks. We shall study self-organizing behaviors of graphene nanoribbons in Y-junctions. We determine the conditions for perfect formation of nanotube Yjunctions from parallel nanoribbons. The role of graphene nanolithography in nanoribbon network and nanotube network production is studied. Our simulations show the possibility of nanotube network realization as well.

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“…For the introduction of line defects, several methods have been proposed, such as catalytic cutting technique, [37][38][39] scanning probe microscope (SPM)-based electric field tailoring technique, 40,41 and energy beam cutting method. 42,43 The drawback to these methods is that they all require complicated experimental conditions.…”

Section: Introductionmentioning

confidence: 99%

Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide

Liu

Wang

et al. 2011

Journal of Applied Physics

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Electrical conductivity in Li2O2 and its role in determining capacity limitations in non-aqueous Li-O2 batteries J. Chem. Phys. 135, 214704 (2011) Refinement of the theory for extracting cell dielectric properties from dielectrophoresis and electrorotation experiments Biomicrofluidics 5, 044109 (2011) Current-controlled negative differential resistance due to Joule heating in TiO2 Appl. Phys. Lett. 99, 202104 (2011) Quantitative characterization of acid concentration and temperature dependent self-ordering conditions of anodic porous alumina AIP Advances 1, 042113 (2011) Direct solar energy conversion and storage through coupling between photoelectrochemical and ferroelectric effects AIP Advances 1, 042104 (2011) Additional information on J. Appl. Phys. A simple and controllable method is developed to experimentally study the effects of defects on reduced graphene oxide (RGO) sheets for nanoelectronics application. First, a deterministic technique is developed to assemble a single layer graphene oxide sheet onto the gaps of microelectrodes by optimizing the dielectrophoretic parameters (10 V pp at 1 MHz for 5 s). This is followed by the utilization of atomic force microscopy-based mechanical cutting method to form line defects on RGO sheets. Based on these two procedures, the experimental studies of the effects of line defects on RGO are investigated, which provides an alternative approach to study the influence of defects on graphene. The electric transport measurement results show that the electrical performance of the defected RGO devices generally decrease due to Anderson localization, which supports the theoretical studies of the influence of defects on the electrical properties of RGO.

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Nanolithography and manipulation of graphene using an atomic force microscope

Cited by 139 publications

References 36 publications

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Self-organizing Behavior of Y-junctions of Graphene Nanoribbons

Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide

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