Nanocrystal memories for FLASH device applications

Ammendola, G.; Ancarani, V.; Triolo, Virginia; Bileci, M.; Corso, D.; Crupi, I.; Perniola, L.; Gerardi, C.; Lombardo, S.; DeSalvo, B.

doi:10.1016/j.sse.2004.03.012

Cited by 29 publications

(17 citation statements)

References 5 publications

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“…Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al 2 Synchrotron radiation x-ray photoelectron spectroscopy is used for the study of 5 nm Si nanocrystals ͑NCs͒ for applications in nonvolatile memory devices. A detailed peak shape analysis of the high-resolution Si 2p core-level spectra reveals average chemical shifts for the oxidized components consistent with those observed for planar oxidation.…”

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confidence: 99%

“…͓DOI: 10.1063/1.2105990͔ Silicon nanocrystals ͑Si NCs͒ memories are currently studied as solutions to overcome the scaling limitations of conventional flash and nonvolatile memories. 1,2 The discrete electron storage in Si NCs replaces the conventional charge storage in continuous floating gates. When high density small Si NCs ͑about 5 nm diameter͒ on a low leakage tunneling dielectric are used, a memory device with a large threshold voltage shift and a long-time retention is obtained.…”

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confidence: 99%

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Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces

Renault

Marlier

Gély

et al. 2005

Applied Physics Letters

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Synchrotron radiation x-ray photoelectron spectroscopy is used for the study of 5 nm Si nanocrystals (NCs) for applications in nonvolatile memory devices. A detailed peak shape analysis of the high-resolution Si2p core-level spectra reveals average chemical shifts for the oxidized components consistent with those observed for planar oxidation. However, a much larger Gaussian width is found for each spectral component, reflecting the important level of structural disorder in the NCs, arising from stress produced during the kinetics of the oxide shell growth. Final state contributions to the core-level spectra are also discussed.

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confidence: 99%

mentioning

confidence: 99%

Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces

Renault

Marlier

Gély

et al. 2005

Applied Physics Letters

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“…The mechanism responsible of the Si-nc charge injection is channel hot electron (CHE). Nowadays, this mechanism is widely used to program commercial NOR-type Flash memories, and it is known to allow a fast injection and induce higher threshold voltage shifts (roughly proportional to the charge present in the dielectric) than a FN programming [23]. A constant gate voltage above threshold (V G >V th ) causes light emission from nanocrystal excitons.…”

Section: Modulation By Channel Hot Electron Injection Of the Continuomentioning

confidence: 99%

Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals

et al. 2008

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Abstract. We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by ion implantation of Si + in the 15-nm-thick gate oxide of a field effect transistor at 6.5 keV. A characteristic readpeaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation it is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which make impossible the direct modulation of light beyond 100 Kb/s rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100%-deep modulation at rates of 200 Mb/s and low modulating voltages. This approach, may find applications in biological sensing integrated into CMOS, single-photon emitters, or direct encoding of information into light from Si-nc doped with Erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (10 5 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. A Si/SiO 2 barrier change from Φ b =3.2 eV to 4.2 eV is found while the injection mechanism is changed from Fowler-Nordheim to Channel Hot Electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching.

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“…Silicon nanocrystal (Si-NC) memories are one of the most promising solutions to push the scaling limits of Flash memories at least to the 32-20nm technology nodes [1][2][3][4][5]. Due to their discrete nature, Si-NCs are robust to defects in the oxide.…”

Section: Introductionmentioning

confidence: 99%

Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory

Jacob

Festes

Bodnar

et al. 2007

ESSDERC 2007 - 37th European Solid State Device Research Conference

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In this paper, Silicon Nanocrystals (Si-NCs) fabricated by Chemical Vapor Deposition (CVD) are, for the first time at our knowledge, successfully integrated in a 32Mb NOR Flash memory product, processed in a 130nm technology platform. The large set of data measured on arrays clearly demonstrates the robustness of our process and integration scheme. Different Si-NC deposition conditions are explored and the array voltage distribution widths are related to Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are correlated to single cell characteristics.

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Nanocrystal memories for FLASH device applications

Cited by 29 publications

References 5 publications

Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces

Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces

Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals

Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory

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