2009
DOI: 10.1016/j.mseb.2008.05.012
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Abstract: The preparation of tetrakaidecahedron-shaped nanocavities in silicon via thermal treatments of high-fluence helium-implanted silicon is a well established process. When the mean distance between Such cavities is on the length scale of the exciton diameter, they are expected to modulate the silicon band structure. This property, however, can hardly be exploited due to the large number of dangling bonds remaining on the cavity inner surface at the end of the process. An easy way to reduce their amount is to pass…

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