Nano-scale GeO2 wires synthesized by physical evaporation

Bai, Z. G.; Yu, Dapeng; Zhang, H.Z.; Ding, Yu; Wang, Y.P.; Gai, X.Z.; Hang, Qingling; Xiong, Gengyan; Feng, Sun

doi:10.1016/s0009-2614(99)00066-4

Cited by 194 publications

(66 citation statements)

References 12 publications

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“…The main reasons include their interesting photonic and electronic properties, and their importance as building blocks for interconnects of transistors, junctions between metals and semiconductors, and the tips of emitters. There are numerous studies on whiskers and wires of Si and III±V systems, [1±4] and also on oxide systems, including SnO 2 , [5] SiO 2 , [6] GeO 2 , [7] ZnO, [8,9] indium tin oxide (ITO), [10] and Al 2 O 3 . [11] Among them, ZnO is an n-type semiconductor with a wide bandgap (3.30 eV).…”

Section: Introductionmentioning

confidence: 99%

Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

Tseng

Huang

Cheng

et al. 2003

Adv Funct Materials

393

164

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Needle‐like ZnO nanowires with high density are grown uniformly and vertically over an entire Ga‐doped conductive ZnO film at 550 °C. The nanowires are grown preferentially in the c‐axis direction. The X‐ray diffraction (XRD) θ‐scan curve shows a full width at half maximum (FWHM) value of 2°. This indicates that the c‐axes of the nanorods are along the normal direction of the substrate surface. The investigation using high‐resolution transmission electron microscopy (HRTEM) confirmed that each nanowire is a single crystal. A room‐temperature photoluminescence (PL) spectrum of the wires consists of a strong and sharp UV emission band at 380 nm and a weak and broad green–yellow band. It reveals a low concentration of oxygen vacancies in the ZnO nanowires and their high optical quality. Field electron emission from the wires was also investigated. The turn‐on field for the ZnO nanowires was found to be about 18 V μm–1 at a current density of 0.01 μA cm–2. The emission current density from the ZnO nanowires reached 0.1 mA cm–2 at a bias field of 24 V μm–1.

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Section: Introductionmentioning

confidence: 99%

Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

Tseng

Huang

Cheng

et al. 2003

Adv Funct Materials

393

164

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show abstract

“…Recently, much attention has been paid to the preparation of nanowires of the family of oxides for their interesting optical and electrical properties. Several binary oxides nanowires such as MgO [7], SiO 2 [8], Ga 2 O 3 [9], and ZnO [10] have been successfully synthesized. To the boron elements, it is the third lightest element in the solid form, but has a high melting temperature near 2300 • C. Its hardness is very close to that of a diamond.…”

Section: Introductionmentioning

confidence: 99%

A simple method to prepare boron suboxide fibres

et al. 2006

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In this paper, boron suboxide fibres are synthesized by a solid state reaction method using CaO, B and Fe 3 O 4 as starting materials in Ar atmosphere. The boron suboxide fibres include nanobelts and nanowires and they have unique morphologies. Through adjusting the contents of starting materials, we can control the diameters of boron suboxide fibres. Using the laser Raman spectrum, the photic properties were measured. The possible growth mechanism of the boron suboxide structure is discussed. As the boron suboxide has many excellent physics properties, it is believed that boron suboxide fibres synthesized have promising applications in functional ceramics fillings or in electronics.

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“…VLS growth requires the involvement of a liquid-forming (or so-called catalysts) additive [16,17]. Catalysts such as copper, gold, cobalt or other transition metal nanoparticles/film can often be used.…”

Section: Introductionmentioning

confidence: 99%

“…Catalysts such as copper, gold, cobalt or other transition metal nanoparticles/film can often be used. In this method, the usual synthesis temperature is in the range of 850-950°C [2,3,[16][17][18][19], and the lowest preparation temperature for ZnO nanowires was reported to be 450°C (NiO catalyzed) [20]. The synthesis temperature for ZnO nanostructures by VS growth is from ∼850°C (Zn powder evaporation) to ∼1400°C (zinc oxide powder evaporation) [6,15,[21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Quasi One-dimensional ZnO Nanostructures Fabricated without Catalyst at Lower Temperature

et al. 2006

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One-or quasi one-dimensional zinc oxide nanostructures possess plenty of morphologies. Only by controlling the gas flow rates, and partial pressures of argon, oxygen and zinc vapor, can various types of highquality ZnO nanomaterials (such as wires, belts, arrays, saws or combs, tetraleg rods, nails, and pins) be synthesized through pure zinc powder evaporation without a catalyst at the temperature range of 600-700°C. In this study, deposited nanostructures were characterized by means of scanning electron microscopy, X-ray diffraction and high-resolution transmission electron microscopy. The authors propose and discuss the growth mechanisms of various ZnO. In addition, properties of room temperature photoluminescence and field emission of several typical ZnO nanostructures are measured and investigated.

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Nano-scale GeO2 wires synthesized by physical evaporation

Cited by 194 publications

References 12 publications

Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

A simple method to prepare boron suboxide fibres

Quasi One-dimensional ZnO Nanostructures Fabricated without Catalyst at Lower Temperature

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