N-type vapor diffusion for the fabrication of GaSb thermophotovoltaic cells to increase the quantum efficiency in the long wavelength range

Tang, Liangliang; Fraas, Lewis M.; Liu, Zhuming; Zhang, Yi; Duan, Huiling; Xu, Chang

doi:10.1016/j.solmat.2019.02.010

Cited by 15 publications

(7 citation statements)

References 19 publications

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“…The integration serves as a built-in plasma filter by reflecting the IR radiation at a longer wavelength back to the radiation source hence improving the overall performance. Recently, Tang et al [ 152 ] demonstrated the n-type vapor diffusion by depositing a silicon oxide layer on the p-GaSb surface. In comparison to a traditional p-on-n GaSb TPV cell structure, higher QEs at longer photon wavelengths have been reported, resulting in 1.42 times higher output power density recorded under 1573 K temperature.…”

Section: Gasb-based Tpv Cellmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Gasb-based Tpv Cellmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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“…84 The development of doping techniques in GaSb without introducing recombination centers is an ongoing area of research. 85,86 Poor dark current among other cell materials considered here may further be the result of technological immaturity. While Si-and Ge-containing cells have witnessed remarkable strides in solar PV applications, development of Si and Ge cells for TPV systems has been limited.…”

Section: Charge Carrier Managementmentioning

confidence: 99%

Present Efficiencies and Future Opportunities in Thermophotovoltaics

Burger

Sempere

Roy-Layinde

et al. 2020

Joule

150

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Despite the relevance of thermophotovoltaic (TPV) conversion to many emerging energy technologies, identifying which aspects of current TPV designs are favorable and where opportunities for improvement remain is challenging because of the experimental variability in TPV literature, including emitter and cell temperatures, cavity geometry, and system scale. This review examines several decades of experimental TPV literature and makes meaningful comparisons across TPV reports by comparing each energy-conversion step to its respective, experiment-specific thermodynamic limit. We find that peak reported efficiencies are nearing 50% of their thermodynamic limit. Emitter-cell pairs that best manage the broad spectrum of thermal radiation exhibit the best efficiencies. Large gains in peak efficiency are expected from further suppression of sub-bandgap radiative transfer, as well as improvements in carrier management that address bandgap underutilization and Ohmic losses. Furthermore, there is a noticeable practical gap between the leading material pairs and integrated devices, mainly due to a lack of scaled-up high-performance materials, which exposes surfaces to parasitic heat loss. Provided these challenges are overcome, TPVs may ultimately provide power on demand and near the point of use, enabling greater integration of intermittent renewables.

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“…In p-type semiconductor-based photon-enhanced thermionic emission devices and p-n junction-based TPVCs, the current density is generally calculated based on the diffusiondrift and diffusion-emission model [13,[22][23][24]. Nevertheless, the application of the diffusion-drift and diffusion-emission model on the SJ-based TPVCs has not been reported.…”

Section: Model Descriptionmentioning

confidence: 99%

Schottky junction-based thermophotovoltaic-thermionic devices

Liao

Guo

et al. 2019

J. Phys. D: Appl. Phys.

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A conceptual model of a Schottky junction (SJ)-based thermophotovoltaic-thermionic device (SJTTD) that can simultaneously convert thermally emitted electrons and photons into electricity is proposed, where the thermionic cell (TIC) is composed of a tungsten-based cathode and anode, and the thermophotovoltaic cell (TPVC) is made of a thermal emitter and an SJ. The thermal emitter simultaneously acts as the cathode of the TIC and the anode/p-type silicon interface forms the SJ. The impacts of space charge effect on the TIC and radiative recombination on the TPVC are taken into account. According to the theory of statistical physics, analytical expressions for the total power output density and energy conversion efficiency of the SJTTD are derived. The maximum power output density and efficiency are calculated numerically by optimizing the key parameters of the two subsystems. Further, the parametric optimum criteria are provided. The optimally operating states of the ideal and non-ideal SJTTDs are compared. The results show that selecting cathode materials with high emissivity can significantly enhance the performance. The proposed model may be helpful for developing high-efficiency hybrid electron devices.

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N-type vapor diffusion for the fabrication of GaSb thermophotovoltaic cells to increase the quantum efficiency in the long wavelength range

Cited by 15 publications

References 19 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

Present Efficiencies and Future Opportunities in Thermophotovoltaics

Schottky junction-based thermophotovoltaic-thermionic devices

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