Abstract:Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub IV operation is achieved by reducing cross-sectional wire diameters to -0.05 urn. Since the conventional optical lithog… Show more
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