Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Abstract

Response to "Comment on 'Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses'" [J. Appl. Phys. 112, 076101 (2012)] J. Appl. Phys. 112, 076102 (2012) Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation J. Appl. Phys. 112, 073702 (2012) Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure Appl. Phys. Lett. 101, 133503 (2012) A model for internal photoemission at high-k oxide/silicon energy barriers Admittance spectroscopy is extended for measuring capacitance and conductance on metal-oxide-semiconductor ͑MOS͒ structures as a function of gate voltage, frequency, and temperature. An automatic setup has been designed for collecting data along these dimensions in one measurement cycle. The theory for admittance spectroscopy has been developed by starting from basic charge carrier statistics. Using numerical integration of energy dependent parameters instead of the commonly used analytical solution, conductance dispersion curves are obtained which do not need to be adjusted by assuming lateral surface potential variations at the oxide-semiconductor interface. Also, we find that interface state densities extracted by using traditional methods are four times lower than those obtained by using our theory. Experimental data presented in three-dimensional plots are compared with theoretical calculations, revealing the possibilities and limitations of the conductance method.

Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics

“…This equivalent circuit model takes into account the capacitance contributions from the IL, energy. 35,41 The mathematical expression for this quantity can be formulated as…”

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

“…Fig. 1c shows the equivalent circuit suggested in [9,10] where some principal remarks were made concerning the interpretation of the results in the case when the density of states or capture cross section has strong energy dependence. However, none of these equivalent circuits takes into consideration the fact that the dielectric layer itself may have significant leakage current, which becomes more important if the thickness of the oxide is small.…”

“…Application of conductance-frequency spectroscopy to characterization of high -oxide/silicon interface and possible nature of interface defects of several high k − k − systems were discussed in [4,[8][9][10]. However, this technique was not commonly used for the study of interface properties in the case when a high leakage current flows through the dielectric film.…”

“…However, it was primarily developed for the SiO 2 /Si systems with a relatively thick dielectric layer and relatively low leakage currents. The comprehensive analysis of advantages and restrictions of the ω G-technique, in particular in its application to measurements of interface states in the structures with high k − dielectrics, can be found in [9,10]. Fig.…”

Band Diagrams and Trap Distributions in Metal-SiO2-SiC(3C) Structures with Different Metal Gates

“…The MPAS method (20) consists of taking (highly automated) measurements of the MOS structure conductance as a function of gate bias, V G , and the logarithm of the inverted frequency (log 1/ω). Results of such measurements allow to construct the quasithree dimensional representations (maps) allowing to elucidate variations in mechanisms of charge carrier capture into interface states.…”