Multi-objective optimization of energy consumption, surface roughness, and material removal rate in diamond wire sawing for monocrystalline silicon wafer

Sefene, Eyob Messele; Chen, Chao-Chang Arthur

doi:10.1007/s00170-023-12335-8

Cited by 6 publications

(2 citation statements)

References 52 publications

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“…Assessment of sustainable performance metrics in the manufacturing process is crucial for evaluating and enhancing production's environmental, social, and economic aspects [7,27,28]. This study considers four sustainable performance metrics to assess the sustainability of the MDWS process, including processing time, energy consumption, carbon dioxide emission, and machining cost.…”

Section: Measurements and Analysis Of Sustainable Performance Metricsmentioning

confidence: 99%

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Sefene,

Chen,

Tsai

et al. 2024

Preprint

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The rapacious demand for energy in semiconductor wafer manufacturing industries has significant implications for global warming and wafer manufacturing costs. Assessing sustainability in the multi-diamond wire sawing (MDWS) process is crucial for reducing costs and mitigating environmental impacts. However, sustainability assessment integrated with machinability performance metrics in this process has not been investigated. This novel study extensively analyzes sustainability metrics such as processing time, energy consumption, carbon dioxide emission, machining cost, and machinability characteristics, including surface roughness, diamond wear rate, and sawing temperature in monocrystalline silicon carbide (mono-SiC) sawing process. Experiments were conducted using traditional MDWS (T-MDWS), reactive MDWS (R-MDWS), and electrophoretic-assisted reactive MDWS (ER-MDWS) coolants. An autoregressive integrated moving average (ARIMA) model were used to predict the overall energy consumption of the MDWS machine. Results showed significant improvements across various responses such as processing time, energy consumption, carbon dioxide emissions, machining cost, surface roughness, diamond wear rate, and sawing temperature, with reductions of 2.95%, 3.87%, 6.80%, 12.82%, 4.68%, 16.32%, and 4.39%, respectively. Furthermore, the ARIMA model results indicate that the total energy consumption prediction accuracy reaches 98.813%. The findings demonstrated that the ER-MDWS cooling strategy is well-suited for large-scale wafer production without compromising surface quality while minimizing environmental impact.

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Section: Measurements and Analysis Of Sustainable Performance Metricsmentioning

confidence: 99%

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Sefene,

Chen,

Tsai

et al. 2024

Preprint

Self Cite

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“…Monocrystalline silicon (mono-Si) is currently widely used in semiconductor chip substrates and photovoltaic solar cells [1,2]. Silicon wafer processing adopts diamond wire saw slicing technology, which has also been widely used in the slicing processing of other hard and brittle materials such as silicon carbide [3], sapphire [4,5], and stone [6].…”

Section: Introductionmentioning

confidence: 99%

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

Wang,

Gao,

Yang

2024

Materials

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In diamond wire saw cutting monocrystalline silicon (mono-Si), the material brittleness removal can cause microcrack damage in the subsurface of the as-sawn silicon wafer, which has a significant impact on the mechanical properties and subsequent processing steps of the wafers. In order to quickly and non-destructively obtain the subsurface microcrack damage depth (SSD) of as-sawn silicon wafers, this paper conducted research on the SSD prediction model for diamond wire saw cutting of mono-Si, and established the relationship between the SSD and the as-sawn surface roughness value (SR) by comprehensively considering the effect of tangential force and the influence of the elastic stress field and residual stress field below the abrasive on the propagation of median cracks. Furthermore, the theoretical relationship model between SR and SSD has been improved by adding a coefficient considering the influence of material ductile regime removal on SR values based on experiments sawing mono-Si along the (111) crystal plane, making the theoretical prediction value of SSD more accurate. The research results indicate that a decrease in wire speed and an increase in feed speed result in an increase in SR and SSD in silicon wafers. There is a non-linear increasing relationship between silicon wafer SSD and SR, with SSD = 21.179 Ra4/3. The larger the SR, the deeper the SSD, and the smaller the relative error of SSD between the theoretical predicted and experimental measurements. The research results provide a theoretical and experimental basis for predicting silicon wafer SSD in diamond wire sawing and optimizing the process.

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Assessment of sustainable and machinable performance metrics of monocrystalline silicon carbide wafer with electrophoretic-assisted multi-diamond wire sawing

Sefene,

Chen,

Tsai

et al. 2024

Int J Adv Manuf Technol

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Multi-objective optimization of energy consumption, surface roughness, and material removal rate in diamond wire sawing for monocrystalline silicon wafer

Cited by 6 publications

References 52 publications

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

Assessment of sustainable and machinable performance metrics of monocrystalline silicon carbide wafer with electrophoretic-assisted multi-diamond wire sawing

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