Multi-mode tunable absorber based on graphene metamaterial

Hu, Ning; Liu, Peiguo; Bian, Li-an; Zhou, Qihui; Liu, Chenxi; Zhang, Jihong; Liu, Hanqing

doi:10.1016/j.spmi.2018.07.009

Cited by 8 publications

(1 citation statement)

References 37 publications

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“…With adjusting the Fermi energy of BDS, the first and the second absorbing peaks had slight shift to the left and the absorption effect was decreased, while the third peak had slight shift to the right and was increased. Hu et al presented a multi-mode tunable absorber based on graphene [109]. The absorber is composed of a gold-graphene resonator, two small thickness Al 2 O 3 films, two unpatterned graphene films, two SiO 2 films and a gold substrate.…”

Section: Tunable Terahertz Absorbermentioning

confidence: 99%

Advancements in tunable and multifunctional metamaterial absorbers: a comprehensive review of microwave to terahertz frequency range

Liu,

Dong,

Sabri

et al. 2024

J. Phys. D: Appl. Phys.

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Over the past two decades, metamaterial absorbers have undergone significant advancements, evolving from microwave single-frequency designs to multi-frequency and broadband absorption, extending into the terahertz band. These absorbers have transitioned from unadjustable to adjustable and multifunctional configurations, enabled by the integration of adjustable materials, mechanical structures, and semiconductor devices. This article provides a comprehensive review of the progress achieved in the microwave to terahertz frequency range over the last five years. Key aspects covered include the absorbing mechanism of metamaterials in the microwave frequency band, with absorption efficiencies exceeding 90% for specific frequency ranges. The development of adjustable absorbers allows for frequency tunability within ±10% of the central frequency, while multifunctional absorbers enable concurrent control over absorption and reflection properties. In the terahertz regime, advanced electromagnetic simulations have led to absorber designs with bandwidths exceeding 50% of the central frequency, resulting in absorption efficiencies above 80% over the entire bandwidth. Integration of gallium nitride-based Gallium Nitride High Electron Mobility Transistors (GaN HMET) provides fast switching speeds below 100 nanoseconds, facilitating rapid reconfiguration of absorber functionalities. These advancements in metamaterial absorbers offer promising prospects for intelligent and integrated designs in future applications.

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Section: Tunable Terahertz Absorbermentioning

confidence: 99%