MSM-photodetector with ZnSe/ZnS/GaAs Bragg reflector

Аверин, С. В.; Kuznetzov, P. I.; Житов, В. А.; Zakharov, L. Yu.; Котов, В. М.

doi:10.1007/s11082-020-2213-1

Cited by 5 publications

(4 citation statements)

References 17 publications

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“…51 The effect of a ZnSe/ZnS/GaAs distributed Bragg reflector on the spectral response of an MSM-diode was investigated by Averin et al in 2020. 123 The experimental results showed that the MSM photodiode was based on a periodic ZnSe/ZnS/GaAs heterostructure from a distributed Bragg reflector. This detector shows a low dark current of 5 × 10 −10 A at 40 V, and the response wavelength of the photodetector can be adjusted by appropriately selecting the parameters of the heterostructure layers.…”

Section: Ii–vi Group Semiconductor Based Uv Photodetectors and Applic...mentioning

confidence: 97%

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

et al. 2022

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Section: Ii–vi Group Semiconductor Based Uv Photodetectors and Applic...mentioning

confidence: 97%

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

et al. 2022

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“…In this paper, we report the innovative approach of using CdSe, i.e., II–VI group material, as a shell for the III–V InAs core NW (see inset in Figure b). Such a hybrid system containing III–V and II–VI semiconductors is well-known in planar heterostructures , but, to our knowledge, has not yet been implemented for NWs. However, in the special case of InAs/CdSe NWs, one first benefits from the small band gap, low electron effective mass, and high g-factor of the InAs core material.…”

Section: Introductionmentioning

confidence: 99%

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

Kaladzhian,

von den Driesch,

Demarina

et al. 2024

ACS Appl. Mater. Interfaces

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Core-only InAs nanowires (NWs) remain of continuing interest for application in modern optical and electrical devices. In this paper, we utilize the II−VI semiconductor CdSe as a shell for III−V InAs NWs to protect the electron transport channel in the InAs core from surface effects. This unique material configuration offers both a small lattice mismatch between InAs and CdSe and a pronounced electronic confinement in the core with type-I band alignment at the interface between both materials. Under optimized growth conditions, a smooth interface between the core and shell is obtained. Atom probe tomography (APT) measurements confirm substantial diffusion of In into the shell, forming a remote n-type doping of CdSe. Moreover, field-effect transistors (FETs) are fabricated, and the electron transport characteristics in these devices is investigated. Finally, band structure simulations are performed and confirm the presence of an electron transport channel in the InAs core that, at higher gate voltages, extends into the CdSe shell region. These results provide a promising basis toward the application of hybrid III−V/II−VI core/shell nanowires in modern electronics.

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“…[ 1 ] In addition, ZnSe substrates are also used to fabricate metal–semiconductor–metal diodes to behave as Bragg reflector. [ 2 ] The device exhibited a two colors response at 420 and 472 nm. It shows high quantum efficiency (53%) and very low dark current values (10 −10 A).…”

Section: Introductionmentioning

confidence: 99%

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Algarni

Qasrawi

Khusayfan

2021

Physica Status Solidi (a)

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Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10−5 mbar. The device is characterized by X‐ray diffraction, X‐ray photoelectron, X‐ray fluorescence, and impedance spectroscopy techniques. It is observed that when the device is contacted with carbon point contacts, it exhibits resonance–antiresonance phenomena near 1.0 GHz. The Au/ZnSe/GeO2/C devices display negative capacitance effect in the frequency domain of 0.96–1.80 GHz. Analyses of the conductivity and capacitance spectra in the frequency domain of 0.01–1.80 GHz reveal the domination of conduction by quantum mechanical tunneling below 0.58 GHz and by the correlated barriers hopping above 0.58 GHz. In addition, characterizations of the impedance, reflection coefficient, return loss (Lnormalr) and voltage standing wave ratios (VSWRs) spectra of the device indicated ideal bandstop filter features. The notch frequency of the filter is 1.56 GHz. At this critical frequency, the Au/ZnSe/GeO2/C devices display ideal characteristics presented by VSWR of 1.0, Lnormalr value of 28.9 dB. These features make the Au/ZnSe/GeO2/C heterojunction devices promising for use in telecommunication technology.

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MSM-photodetector with ZnSe/ZnS/GaAs Bragg reflector

Cited by 5 publications

References 17 publications

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

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MSM-photodetector with ZnSe/ZnS/GaAs Bragg reflector

Cited by 5 publications

References 17 publications

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

Design and Characterization of ZnSe/GeO2 Heterojunctions as Bandstop Filters and Negative Capacitance Devices

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Product

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Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices