MOVPE Mechanisms from studies of specially designed and labelled precursors

As Doping in (Hg,Cd)Te: An Alternative Point of View

“…When this and the precursor arsine are the only species present, they react together to give [RAsH], which in turn decomposes by reductive elimination to give RH and arsenic. 37 It is probable that the presence of alkyl radicals from the decomposition of other precursor molecules such as Me 2 Cd, di-iso-propyltelluride (Pr i 2 Te) or trimethylgallium (Me 3 Ga), will lead to H atom abstraction from the parent arsine to give [RAsH] directly. A second abstraction of H may also occur to give RAs, which could lead to incorporation of As into the growing layer as RAs, which should not be electrically active and will lead to significant carbon contamination.…”

Coinage Metal Complexes with Di‐tertiary‐butyl Sulfide as Precursors with Ultra‐Low Decomposition Temperature

“…[19][20][21][22][23] On the contrary, the exploit of non-silylated chalcogenoethers R 2 E (R = a non-silylated alkyl group; E = S, Se, Te) have been mainly restricted to the elaboration of thin films by chemical vapor deposition technique requiring usually high temperature. [24,25] Only recently, we have employed nonsilylated selenoether ligands, particularly the ones having facile decomposition mechanism, [26] for the first time in the solutionphase synthesis of metal selenide NPs for the photocatalytic applications. [27][28][29][30] Thus, the reactions of t Bu 2 Se with coinage metal reagents not only resulted in the formation of binary and ternary metal selenide NPs at room temperature (RT) but also allowed us to isolate and characterize highly reactive molecular intermediates during the reactions.…”