Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

Abstract

In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic f T and f max have been obtained and compared with experimental data, getting a good agreement for f T but some discrepancies for f max . Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F min =0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm.

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

“…The purpose of this work is to analyze the influence of the kink effect on the noise performance of isolated-gate InAs/AlSb HEMTs. With this aim, we make use of a semiclassical 2D ensemble Monte Carlo (MC) simulator [8] adequately adapted to correctly reproduce the experimental static, dynamic and noise behavior of InAs/AlSb devices in absence of kink effect (this is, for low values of VDS) [9][10][11], in which the impact ionization and hole transport have been included [12][13][14]. The MC method is the most appropriate technique for the analysis of these devices, since electron transport can easily turn into ballistic or quasi-ballistic in the channel due to the huge mobility of InAs [9].…”