volume 135, issue 3, P285-288 2006
DOI: 10.1016/j.mseb.2006.08.019
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Abstract: The effect of the position of the δ-doping layer(s) on performance of III-V heterostructure MOSFET is investigated using Monte Carlo simulations. A 100 nm gate length MOSFET with an In 0.2 Ga 0.8 As channel delivers a drive current of 600 A/m at a 0.5 V overdrive when the δ-doping is placed below the channel. If the same amount of the δ-doping is placed above the channel, the drive current increases to 900 A/m at the same overdrive and the threshold voltage increases by 0.5 V. When two δ-doped layers are plac…

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