Monolithically Integrated Extended Cavity Diode Laser emitting at 778 nm

Wenzel, S.; Brox, O.; Casa, Pietro Della; Wenzel, H.; Arar, Bassem; Knigge, Andrea; Weyers, M.; Wicht, Andreas

doi:10.1364/cleo_at.2022.aw4m.5

Conference on Lasers and Electro-Optics 2022

DOI: 10.1364/cleo_at.2022.aw4m.5

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Monolithically Integrated Extended Cavity Diode Laser emitting at 778 nm

S. Wenzel

O. Brox

Pietro Della Casa

et al.

Abstract: We present a monolithically integrated extended cavity diode laser at 778 nm with a 3 dB linewidth of 200 kHz @ 1 ms. This is the first successful demonstration of active layer removal in AlGaAs by a 2-step epitaxy manufacturing process.

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Monolithically Integrated Extended Cavity Diode Laser emitting at 778 nm

Abstract: We present a monolithically integrated extended cavity diode laser at 778 nm with a 3 dB linewidth of 200 kHz @ 1 ms. This is the first successful demonstration of active layer removal in AlGaAs by a 2-step epitaxy manufacturing process.

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References 7 publications

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