2020
DOI: 10.1109/access.2020.3013763
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Abstract: This paper presents a fully integrated ultrasound system based on a single piezoelectric micromachined ultrasonic transducer (PMUT) monolithically fabricated with a 0.13 µm complementary metal oxide semiconductor (CMOS) process analog front-end circuitry. The PMUT consists of an aluminum nitride, AlN, squared device with 80 µm side that resonates at 2.4 MHz in liquid environment. The monolithic integration of the PMUT with the CMOS circuitry allows a reduction of the parasitic capacitance, a reduction of the e… Show more

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Cited by 31 publications
(21 citation statements)
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“…To validate the proposed MFPW algorithm for ultrasound distance measurements in liquid, an 80 µm squared piezoelectric micromachined ultrasonic transducer (PMUT), fabricated with the MEMS-on-CMOS process from Silterra was used [ 16 , 17 ]. In this case the PMUT is composed of 1.2 μm AlScN (Aluminium Nitride doped with 9.5 % Scandium) sandwiched between aluminum electrodes and covered by 1.5 μm Silicon Nitride as elastic layer [ 18 ].…”
Section: Resultsmentioning
confidence: 99%
“…To validate the proposed MFPW algorithm for ultrasound distance measurements in liquid, an 80 µm squared piezoelectric micromachined ultrasonic transducer (PMUT), fabricated with the MEMS-on-CMOS process from Silterra was used [ 16 , 17 ]. In this case the PMUT is composed of 1.2 μm AlScN (Aluminium Nitride doped with 9.5 % Scandium) sandwiched between aluminum electrodes and covered by 1.5 μm Silicon Nitride as elastic layer [ 18 ].…”
Section: Resultsmentioning
confidence: 99%
“…can be explored for extending the range of operation to an even higher frequency domain (MHz-GHz). Aluminum Nitride based HHG system will enable monolithic integration of CMOS and MEMS 42 on a single chip which can cater to the ever-growing demands of the Internet-of-Things . In the optical domain, acoustic modulators have been used to perform wave mixing across a range of frequencies.…”
Section: Discussionmentioning
confidence: 99%
“…The bottom electrode is common for all PMUT devices, and the gap between consecutive elements is 25 µm. Every single element consists of a squared AlN-PMUT with a 40 µm side, fabricated using the MEMS-on-CMOS SilTerra technology [16,21]. The top electrode size was optimized to maximize the membrane velocity and consequently the output pressure.…”
Section: Multielement Ring Array Designmentioning
confidence: 99%
“…Figure 2c shows a cross-section profile (AA') of the square PMUT device, and Table 1 summarizes the material properties used in FEM COMSOL simulations and the principal geometric dimensions. Every single element consists of a squared AlN-PMUT with a 40 µm side, fabricated using the MEMS-on-CMOS SilTerra technology [16,21]. The top electrode size was optimized to maximize the membrane velocity and consequently the output pressure.…”
Section: Multielement Ring Array Designmentioning
confidence: 99%
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