Monolithic Silicon Microphotonics

Kimerling, Lionel C.; Negro, Luca Dal; Saini, Sajan; Yi, Yasha; Ahn, Donghwan; Akiyama, S.; Cannon, D.D.; Liu, J.; Sandland, Jessica G.; Sparacin, Daniel K.; Michel, Jürgen; Wada, Kazumi; Watts, Michael R.

doi:10.1007/978-3-540-39913-1_3

Cited by 56 publications

(34 citation statements)

References 6 publications

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“…There are various difference methods suitable for the discretization of time derivatives included in continuity Equations (1) and (2). We propose to apply the explicit one [42] in combination with the Gummel iteration method for the drift-diffusion simulation of high-speed photodetectors.…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

“…According to the forecasts of experts, traditional conductors will cease to meet the increasing requirements for the channel capacity, energy efficiency, noise immunity, reliability and manufacturability of integrated interconnections in the immediate future [1]. Integrated electronics will achieve the physical limit of device development called the "interconnection bottleneck" [2]. Nowadays, scientists research different ways of the problem solution [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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Section: Models and Simulation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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“…In the past two decades, there has been growing interest in photonic devices based on Si-compatible materials (Kimerling et al, 2004;Jalali & Fathpour, 2006) in the field both of the optical telecommunications and of the optical interconnects. In this contest, tremendous progresses in the technological processes based on the use silicon-on insulator (SOI) substrates have allowed to obtain reliable and effectiveness full complementary metal-oxide semiconductor (CMOS) compatible optical components such as, low loss waveguides, high-Q resonators, high speed modulators, couplers, and optically pumped lasers (Rowe et al, 2007 ;Vivien et al, 2006 ;Xu et al, 2007 ;Michael et al, 2007;Liu et al, 2007 ;Liu et al, 2006).…”

Section: Introductionmentioning

confidence: 99%

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light

Casalino¹,

Sirleto²,

Iodice³

et al. 2012

Photodetectors

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“…Such light emitters seem an appealing solution to circumvent the microelectronic bottleneck nowadays, for instance, heat dissipation and interconnection problems. 1 Other promising approaches toward this aim are Sinanocrystals (Si-ncs) embedded in a SiO 2 matrix (SiO x ) 2 and also co-doped with RE ions. 3 Published works run from those covering the visible range with RE ions, such as Ce 3þ , 4 Eu 3þ , 5 and Tb 3þ , 6 to those only focusing on the near infrared region with Nd 3þ (Ref.…”

mentioning

confidence: 99%

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Berencén

Wutzler

Rebohle

et al. 2013

Applied Physics Letters

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High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.

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Monolithic Silicon Microphotonics

Cited by 56 publications

References 6 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

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