Monolithic integration of vertical-cavity laser diodes with refractive GaAs microlenses

Strzelecka, E.; Robinson, G. D.; Peters, M.G.; Peters, Frank H.; Coldren, L.A.

doi:10.1049/el:19950483

Cited by 52 publications

(23 citation statements)

References 3 publications

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“…For applications in the blue and UV wavelength regions the resist lenses are usually transferred in fused silica by reactive ion etching (RIE) [11][12][13][14]. RIE transfer in silicon or GaAs is applied for microlenses used in the IR wavelength region [15,16]. Figure 5 shows the RIE transfer process of resist microlenses in fused silica.…”

Section: Fabrication Limits For Diameter Numerical Aperture and Packmentioning

confidence: 99%

Design, fabrication and testing of microlens arrays for sensors and microsystems

et al. 1997

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Section: Fabrication Limits For Diameter Numerical Aperture and Packmentioning

confidence: 99%

Design, fabrication and testing of microlens arrays for sensors and microsystems

et al. 1997

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“…On the other hand, semiconductor based micro lenses are typically fabricated using focused ion beam or pattern transfer from photoresist to semiconductor by wet or dry etching. [27][28][29][30][31][32][33][34][35] The refractive indices are matched but only low aspect ratio micro lenses are typically achieved. Although high aspect ratio GaAs hemispheres have been attempted, 36 no design rules or detailed processing steps have been published and the large volume production capability was unclear.…”

Section: Fabrication Resultsmentioning

confidence: 99%

Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere

Ding

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes J. Appl. Phys. 114, 113104 (2013) A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9% and the overall extraction efficiency of the integrated device is as high as 90%.The hemisphere is fabricated with a consistent aspect ratio ͑height versus width͒ using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.

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“…Collimating and focusing allow smaller size VCSELs and PDs to be used, which reduces their parasitic capacitance and improve their bandwidth. Micro-lenses can be fabricated either on top of VCSELs when the latter are top emitting [19,20], or on the backside of the GaAs substrate for substrate-emitting VCSELs [21,22].…”

Section: Micro-lenses and Micro-mirrorsmentioning

confidence: 99%

An intra-chip free-space optical interconnect

Xue

Garg

Çiftçioğlu

et al. 2010

Proceedings of the 37th Annual International Symposium on Computer Architecture

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Continued device scaling enables microprocessors and other systems-on-chip (SoCs) to increase their performance, functionality, and hence, complexity. Simultaneously, relentless scaling, if uncompensated, degrades the performance and signal integrity of on-chip metal interconnects. These systems have therefore become increasingly communications-limited. The communications-centric nature of future high performance computing devices demands a fundamental change in intra-and inter-chip interconnect technologies.Optical interconnect is a promising long term solution. However, while significant progress in optical signaling has been made in recent years, applying conventional packetswitching interconnect architecture to optical networks require repeated E/O and O/E conversions that significantly diminish the advantages of optical signaling. In this paper, we propose to leverage a suite of newly-developed or emerging devices, circuits, and optics technologies to build a fully distributed interconnect architecture based on free-space optics. With a complexity-effective communication support layer to manage occasional packet collisions, the interconnect avoids packet relay altogether, offers an ultra-low transmission latency and scalable bandwidth, and provides fresh opportunities for coherency substrate designs and optimizations.

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Monolithic integration of vertical-cavity laser diodes with refractive GaAs microlenses

Cited by 52 publications

References 3 publications

Design, fabrication and testing of microlens arrays for sensors and microsystems

Design, fabrication and testing of microlens arrays for sensors and microsystems

Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere

An intra-chip free-space optical interconnect

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